UV sensing using surface acoustic wave device on DC sputtered ZnO monolayer

The Effect of Substrate Material and Postannealing on the Photoluminescence and Piezo Properties of DC-Sputtered ZnO

“…There is a strong interest in its potential application for optoelectronic devices such as light-emitting diodes, laser diodes, and detectors in the ultraviolet (UV) wavelength range. 1 The ZnO properties are similar to those of the widely used semiconductor GaN. The band gap of ZnO is around 3.37 eV (close to that of GaN at 3.39 eV), but the ZnO exciton binding cenergy at 60 meV is more then twice as large as that of GaN (28 meV).…”

“…Films with highly piezoelectric properties and good PL response are prime candidates to fabricate UV sensors based on surface acoustic wave devices. 3 In this paper, we compare the PL of annealed ZnO on various substrates and report on the quest to achieve good d 33 at higher annealing temperatures. It is well known that the properties of ZnO deposition layers are strongly affected not only by the growth conditions but also the postannealing conditions.…”

SAW UV sensors using ZnO nanorods grown on AlN/Si structures

“…ZnO has been widely used for ultraviolet (UV) detectors such as metal-semiconductor-metal phototransistors, photodiodes or surface acoustic wave (SAW)-based photodetectors. Among these devices, SAW devices have advantages which allow for remote wireless operation and a high potential in passive sensors [2][3][4][5].…”

Characterization of ZnO films of surface acoustic-wave oscillators for ultraviolet sensing applications

“…1 ZnO thin films with a c-axis orientation have been used for acoustic wave applications such as surface acoustic wave ͑SAW͒ devices and thin film bulk acoustic wave resonators ͑FBARs͒. [2][3][4] Furthermore, the absorption wavelength of ZnO is approximately 385 nm, so it can be used for UV detection. ZnObased UV sensors that use photoconducting layers, a metalsemiconductor-metal phototransistor, and a Schottky barrier have been widely reported.…”