UV‐sensitive optical sensors based on ITO‐gallium phosphide heterojunctions

Optoelectronics - Advanced Device Structures

2017

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The aim of this chapter is to present a short review in the field of design, fabrication technology, and testing of high-efficiency surface-barrier photodiodes with electrodes based on thin-film transparent conducting oxides (TCO) such as tin-doped indium oxide (ITO) and fluorine-doped tin oxide (FTO). Most of this review is based on our own results obtained and reported during the last 30 years. Besides a brief description of the low-cost spray pyrolysis deposition technique, mainly used in our work for deposition of the TCO films on a semiconductor surface, structural, morphological, and optoelectronic properties of these TCO films are discussed. As an example, a successful application of these TCO films is shown and used in high-efficiency surface-barrier photodiodes for a wide spectral range, from near ultraviolet (UV) to near infrared (NIR), and fabricated on different semiconductor substrates such as traditional Si, wide energy band ZnS, and GaP compound semiconductor substrates. The possible use of the Si surface-barrier structures as radiation-resistant detectors and gamma radiation detectors is discussed. The properties of high-efficiency surface-barrier photodiodes based on a perspective ternary semiconductor compound, Hg 3 In 2 Te 6 mercury indium telluride (MIT), for detection of 1.3 μm and 1.55 μm radiation for applications in fiber optics, are also reported.

Section: Uv Photodetectors Based On Epitaxial Gapmentioning

confidence: 95%

Surface-Barrier Photodiodes with Transparent Electrodes for High-Performance Detection in the UV-NIR Spectrum

Malik¹,

Optoelectronics - Advanced Device Structures

2017

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“…The practical optoelectronic applications (solar cell, hetero-photodiodes, and light emitting diode on silicon) of thin ITO films fabricated by spray pyrolysis are presented in our recently published articles [3][4][5][6]. Table 2.…”

Section: Optoelectronics -Advanced Device Structuresmentioning

confidence: 99%

Sputtered Indium Tin Oxide Films for Optoelectronic Applications

Malik¹,

Optoelectronics - Advanced Device Structures

2017

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High-quality indium tin oxide (ITO) films have been fabricated using a DC sputtering technique in a pure argon atmosphere with a postannealing in an oxygen environment at atmosphere pressure. Structural, morphological, and electro-optical parameters of the ITO films were studied at different annealing temperatures for the films fabricated on two types of glass substrates, soda lime and alkali-free substrates. A comparative analysis shows that low-cost soda lime substrates are suitable for the fabrication of high-quality nanocrystalline ITO films after annealing them at 300°C. This result is of great importance for reducing the cost of thin film solar cells, in which ITO films serve as transparent conducting electrodes. We present a comparison of the properties of sputtered ITO films with those fabricated using a spray pyrolysis deposition technique, which is useful for some optoelectronic applications.

“…A very simple filtration of UV radiation can be achieved using a single thin silver (Ag) film presenting a very narrow transparent window due to the presence of plasma resonance at 320 nm. In this regards, Schottky UV narrow-band photodiodes as Ag-GaP 7,8 and Ag-Si 9 were reported. Such photodetectors presented a very narrow (∼20 nm) bandwidth at 320 nm with a three orders rejection factor of responsivity in the visible and near infrared spectral range in relation to the responsivity at 320 nm wavelength, but their output signal was very small due to the low transparency of the Ag film at 320 nm, in addition to a significant dark current (10 −5 A/cm 2 ) of the Ag-Si detectors 9 that limits the registration of weak UV radiation.…”

mentioning

confidence: 99%

Communication—Silicon Narrow-Band Solar-Blind Ultraviolet Detector Based on Ag-SiO₂-Si Capacitor

Malik¹,

ECS J. Solid State Sci. Technol.

2017

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Solar-blind narrow-band silicon ultraviolet photodetectors based on metal-oxide-semiconductor (MOS) capacitors with silver gate are presented. A very high selectivity was obtained using silver as the band-pass filter. An optimal relationship between the layer and silver film thicknesses was found to obtain a spectral response with a bandwidth of 20 nm at 320 nm and four/five orders rejection factor for the rest of the spectrum. Capacitors operate in non-equilibrium inversion mode that allows to obtaining an internal amplification of photocurrent, up to106, for a weak input optical signal due to a time compression between the charge storage and readout operating modes.