UV–vis transparent conducting Ta-doped SnO2 epitaxial films grown by metal-organic chemical vapor deposition

He, Liqun; Luan, Caìna; Feng, Xianjin; Xiao, Hongdi; Yang, Xiaokun; Wang, Di; Ma, Jin

doi:10.1016/j.materresbull.2019.05.013

Cited by 18 publications

(8 citation statements)

References 30 publications

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“…Mobility and carrier concentration also gained considerably high values at 11.85 cm 2 V -1 s -1 and 2:26 Â 10 20 cm À3 , as compared with those of other synthesised samples. These values of electrical properties are comparable to those of doped SnO 2 coatings reported in the literature [41,63,64]. Additionally, the continuous layers occurring in the SEM images of 2.4 at% Mo-doped thin films (see Fig.…”

Section: Electrical Properties Of Thin Filmssupporting

confidence: 88%

“…The Mo doping did not induce the expansion of bandgap in SnO 2 thin films, i.e. the Moss-Burstein effect (shift of band gap to higher values owing to higher levels of the conduction band being occupied by extra electrons), as usually observed in other doped SnO 2 systems [64,69]. It is likely due to the limited replacement by Mo 6? for Sn 4? in SnO 2 unit cells; therefore, finite higher levels in the conductions band were filled with electrons provided by doping ions.…”

Section: Optical Properties Of Thin Films From Absorption Spectral Datamentioning

confidence: 70%

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A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

Nikiel

Thomas

et al. 2021

J Mater Sci

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In this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

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Section: Electrical Properties Of Thin Filmssupporting

confidence: 88%

Section: Optical Properties Of Thin Films From Absorption Spectral Datamentioning

confidence: 70%

A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

Nikiel

Thomas

et al. 2021

J Mater Sci

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“…The measured direct bandgaps increase with Tadoping, from 3.96 eV for the undoped SnO 2 to 4.24 eV for the 2 mol% Ta-doped SnO 2 films. The increase of bandgap is attributed to the effect of electron doping that shifts the Fermi level into the CB, i.e., the Burstein-Moss effect as reported previously [27,31,32]. Subsequently, the performance of the 2 mol% TTO has been compared with other n-type TCO thin films grown by a solution-based spin-coating method (Table 2), and the records indicate a significant potential of the deposited TTO film for optoelectronic applications.…”

Section: Electrical and Optical Properties Of The Tto Thin Filmsmentioning

confidence: 53%

“…The crystallite size values were estimated for each deposited film with reference to Gaussian-fit (110) peak by using the Debye-Scherrer relation, D = 0.9λ/βcosθ, where λ, β, and θ are the wavelength of X-rays (λ = 1.54056 Å), full-width at half-maximum (FWHM) and Bragg's diffraction angle of the higher intense diffraction (110) peak in radians, respectively [29]. The decrease of crystallite sizes with Ta-doping results in the change of crystallographic ordering as the smaller Ta 5+ cations substitute the larger Sn 4+ cations in the SnO 2 matrix [30][31][32]. Furthermore, these TTO thin films display granular morphology with a crystallite size of 20.0 nm, and the thickness is uniformly controlled to about 400 nm as observed on SEM (Fig.…”

Section: Crystal Structure and Morphology Of The Thin Filmsmentioning

confidence: 99%

“…Therefore, the shape of the CBM is maintained, and the electron effective mass (m e *) becomes smaller, resulting in higher mobility and conductivity. In addition, the increase in the screening effect of dislocation by a high density of doped electrons and enhanced crystallinity may also increase the mobility of the films [31,37]. However, with 3.0 mol% Ta doping, the mobility slightly decreases (20.9 cm 2 V −1 s −1 ), which may result from the increase of defects such as ionized impurity scattering [17,[38][39][40].…”

Section: Electrical and Optical Properties Of The Tto Thin Filmsmentioning

confidence: 99%

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Transparent conductive SnO2 thin films via resonant Ta doping

et al. 2022

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Transparent conductive oxide (TCO) thin films are highly desired as electrodes for modern flat-panel displays and solar cells. Alternative indium-free TCO materials are highly needed, because of the scarcity and the high price of indium. Based on the mechanism of resonant doping, Ta has been identified as an effective dopant for SnO 2 to achieve highly conductive and transparent TCO. In this work, we fabricated a series of Ta-doped SnO 2 thin films (Sn 1−x Ta x O 2 , x = 0.001, 0.01, 0.02, 0.03) with high conductivity and high optical transparency via a low-cost sol-gel spin coating method. The Sn 0.98 Ta 0.02 O 2 film achieves the highest electrical conductivity of 855 S cm −1 with a carrier concentration of 2.3 × 10 20 cm −3 and high mobility of 23 cm 2 V −1 s −1 . The films exhibit a very high optical transparency of 89.5% in the visible light region. High-resolution X-ray photoemission spectroscopy and optical spectroscopy were combined to gain insights into the electronic structure of the Sn 1−x Ta x O 2 films. The optical bandgaps of the films are increased from 3.96 eV for the undoped SnO 2 to 4.24 eV for the Sn 0.98 Ta 0.02 O 2 film due to the occupation of the bottom of conduction band by free electrons, i.e., the Burstein-Moss effect. Interestingly, a bandgap shrinkage is also directly observed due to the bandgap renormalization arising from many-body interactions. The double guarantee of transparency and conductivity in Sn 1−x Ta x O 2 films and the low-cost growth method provide a new platform for optoelectronic and solar cell applications.

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Impact of Ta doping on the optoelectronic and catalytic properties of SnO2 thin films

Senthilkumar,

Raja,

Ramesh Babu

et al. 2023

Appl. Phys. A

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UV–vis transparent conducting Ta-doped SnO2 epitaxial films grown by metal-organic chemical vapor deposition

Cited by 18 publications

References 30 publications

A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

Transparent conductive SnO2 thin films via resonant Ta doping

Impact of Ta doping on the optoelectronic and catalytic properties of SnO2 thin films

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