UX6-100 nm generation CMOS integration technology with Cu/low-k interconnect

Abstract

UX6-100 nm generation CMOS integration technology is demonstrated. Various transistor performances (UHF', HP, MP, Over-drive), yields of unit processes and 6T-SRAM operation were verified using full-integration processed wafers. To meet the requirement for various performance, multi-V, multi-thickness gate-oxide process, low-leakage gate &electric are incorporated in FEOL. To suppress RC increase compared to previous generation, low-k (KefF3.1) interlayer &electric and Cu interconnect dual damascene are incorporated in BEOL.

Intrinsic parameter fluctuations in decananometer mosfets introduced by gate line edge roughness

“…(1) (2) and are the power spectra for Gaussian and exponential autocorrelation functions, respectively. where is the discrete spacing used for the line and .…”

“…N THE past couple of years, MOSFETs have reached deep decananometer (sub 50-nm) dimensions with 40-50-nm physical gate length devices developed now for the 90-nm technology node [1], [2], 35-nm transistors ready for mass production in 2-3 years time [3] and 10-nm MOSFETs with conventional architecture demonstrated in a research environment [4]. Intrinsic parameter fluctuations play an increasingly important role in such devices at a time when the fluctuation margins shrink due to reduction in supply voltage and increased transistors count per chip.…”

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

“…N the past couple of years, MOSFETs have reached decananometer (between 10 and 100 nm) dimensions with 40-50 nm physical gate length devices that are available now in the 90-nm technology node [1], [2], 35-nm transistors ready for mass production in 2 to 3 years time [3] and 15 nm [4], and even 10 nm [5] MOSFETs with conventional architecture demonstrated in a research environment. The 2001 edition of the International Technology Roadmap for Semiconductors forecasts that the MOSFET will become a nanometer scale (i.e.…”