$V$- and $W$-Band Millimeter-Wave GaN MMICs

Sonnenberg, Timothy; Romano, Anthony; Verploegh, Shane; Pinto, Mauricio; Popović, Zoya

doi:10.1109/jmw.2022.3221281

Cited by 15 publications

(8 citation statements)

References 67 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is well known that the off-state capacitance of a switch FET is tunable by controlling the gate bias voltage. We can find that a similar approach has been adopted for X- and W-band GaN reflective-type phase shifter MMICs [ 17 , 18 , 19 ]. The reflective-type phase shifter simply adopts a tunable reactive component to tune the phase over a wide tuning range.…”

Section: Proposed Continuous Phase Calibration Techniquementioning

confidence: 99%

“…The reflective-type phase shifter simply adopts a tunable reactive component to tune the phase over a wide tuning range. In [ 17 , 18 , 19 ], we can find that they employ an off-state FET as a variable reactive load to tune the phase over 70° to 165°. However, they do not apply the technique for the fine phase calibration to reduce the phase error like this work.…”

Section: Proposed Continuous Phase Calibration Techniquementioning

confidence: 99%

See 1 more Smart Citation

A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique

Seo,

Lee,

Lee

et al. 2024

Sensors

View full text Add to dashboard Cite

A 28 GHz digitally controlled 6-bit phase shifter with a precision calibration technique in GaN high-electron mobility transistor (HEMT) technology is presented for Ka-band phased-array systems and applications. It comprises six stages, in which stages 1 and 2 for 5.625° and 11.25° are designed in the form of a switched-line circuit, and stages 3, 4, and 5 for 22.5°, 45°, and 90° are designed in the form of a switched-filter circuit. The final stage 6 for 180° is designed in a single-to-differential balun followed by a single-pole double-throw (SPDT) switch for achieving an efficient phase inversion. A novel continuous tuning calibration technique is proposed to improve the phase accuracy. It controls the gate bias voltage of off-state HEMTs at the stage 6 SPDT switch for fine calibration of the output phase. Fabricated in a 0.15 μm GaN HEMT process using a die size of 1.75 mm2, the circuit produces 64 phase states at 28 GHz with a 5.625° step. The experimental results show that the Root-Mean-Square (RMS) phase error is significantly improved from 8.56° before calibration to 1.08° after calibration. It is also found that the calibration does not induce significant changes for other performances such as the insertion loss, RMS amplitude error, and input-referred P1dB. This work successfully demonstrates that the GaN technology can be applied to millimeter-wave high-power phased-array transceiver systems.

show abstract

Section: Proposed Continuous Phase Calibration Techniquementioning

confidence: 99%

Section: Proposed Continuous Phase Calibration Techniquementioning

confidence: 99%

A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique

Seo,

Lee,

Lee

et al. 2024

Sensors

View full text Add to dashboard Cite

show abstract

“…They can use GaAs process or Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) processes. A recent work [ 31 ] showed promising results in GaN for mmWave operations of radars and communications. However, cost plays a role in the choice of technology, while considering mass volume production.…”

Section: Circuit Level Perspectives Of Jcrs Rf Hardwarementioning

confidence: 99%

Joint Communication and Radar Sensing: RF Hardware Opportunities and Challenges—A Circuits and Systems Perspective

Sen,

Harutyunyan,

Umar

et al. 2023

Sensors

View full text Add to dashboard Cite

This paper focuses on the topic of joint communication and radar sensing (JCRS) and its applications in the scope of upcoming sixth-generation (6G) technology. While the fifth-generation applications have reached the consumer market in the last few years, JCRS has been identified as one of the key technologies for next generation networks. The role of JCRS will vary, ranging from tasks such as radar coordination, context awareness for communication, enhanced security, increased availability, and improving the resilience and trustworthiness of future networks. In this work, the niche of JCRS technology in the future 6G ecosystem, as well as several potential applications, are discussed with a focus on RF hardware. The use of centimeter (cmWave) and millimeter (mmWave) frequency spectrums in the context of JCRS system implementation have been further elaborated. After presenting the near-term application scenarios, the circuit implementation perspectives are investigated in terms of radio frequency (RF) front-end architectures, antenna implementation, and phased arrays. Different communication and radar antenna options are compared, and the best candidates are identified. The packaging options are also presented. From circuit and system perspectives, link budget and self-interference cancellation (SIC) are highlighted. Furthermore, future directions including the next steps on the path to enabling JCRS technology are presented throughout this article. Prior works focused more on physical layers and network capabilities of JCRS systems, with less focus on hardware possibilities; to fill this gap, this article aims to contribute to this exciting research topic with a holistic review of RF hardware, highlighting the diversity of applications and the available technologies to tackle the near- and long-term needs of consumer applications.

show abstract

“…To overcome the speed limit of GaN HEMTs, they can be driven nonlinearly to generate harmonics at higher frequencies. For example, GaN frequency doublers have been demonstrated at 77 GHz with 5-dB conversion loss and 10-dBm output power [21], and at 100 GHz with 4-dB conversion gain and 14-dBm output power [22]. A frequencymultiplying power amplifier can lessen the demand on the transistor cutoff frequency as well as the baseband frequency.…”

Section: Introductionmentioning

confidence: 99%

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

Li,

Fay,

Hwang

2024

IEEE J. Microw.

View full text Add to dashboard Cite

We report a solid-state traveling-wave amplifier (TWA) realized through monolithic integration of transistors with a SiC substrate-integrated waveguide (SIW). The TWA uses a stepped-impedance microstrip line as the input divider, but a low-loss, high-power-capacity SIW as the output combiner. The input signal is distributed to four GaN high-electron mobility transistors (HEMTs) evenly in magnitude but with 90°successive phase delays at the fundamental frequency. The HEMTs are distributed in the SIW in a period of a half wavelength at the second harmonic frequency, so that their outputs are combined coherently at the SIW output. To overcome the limited speed of the HEMTs, they are driven nonlinearly to generate second harmonics, and their fundamental outputs are suppressed with the SIW acting as a high-pass filter. The measured characteristics of the TWA agree with that simulated at the small-signal level, but exceeds that simulated at the large-signal level. For example, under an input of 15 dBm at 70 GHz, the output at 140 GHz is 38-dB above that at 70 GHz. Under an input around 70 GHz and 20 dBm, the output around 140 GHz is 14 dBm with a 3-dB bandwidth of 6%. This is not only the first D-band frequency multiplier based on the GaN HEMT technology, but also one with the highest output power and the lowest fundamental leakage among all D-band multipliers of different transistor technologies. This proof-of-principle demonstration opens the path to improve the power, gain and efficiency of sub-terahertz TWAs with higher-performance transistors and drive circuits. Although the demonstration is through monolithic integration, the approach is applicable to heterogeneous integration with the SIW and transistors fabricated on separate chips.

show abstract

$V$- and $W$-Band Millimeter-Wave GaN MMICs

Cited by 15 publications

References 67 publications

A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique

A 28 GHz GaN 6-Bit Phase Shifter MMIC with Continuous Tuning Calibration Technique

Joint Communication and Radar Sensing: RF Hardware Opportunities and Challenges—A Circuits and Systems Perspective

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

Contact Info

Product

Resources

About