V/III ratio dependence of surface migration length of As4 molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substrates

As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1)A

“…The increase in the surface migration length of adatoms due to decrease in the As/Ga flux ratio is frequently observed. In the specific case of the growth on HI substrates, the enhancement of the adatoms surface migration length along one preferential direction related with the anisotropic nature of the substrate, prompts the formation of large order step arrays [13][14][15][16], as observed in our experiments. Fig.…”

“…In the growth on HI GaAs surfaces, it is found that surface corrugation strongly depends on the variation of the As-flux [2][3][4]13]. Fig.…”

Highly ordered self-assembled nanoscale periodic faceting in GaAs(631) homoepitaxial growth

“…Contrary to what is commonly observed for growth on singular planes, the surface migration length of As 4 molecules on H-I planes increases with an increasing V/III flux ratio. 21 The migration length is likely to be enhanced by the reduction of the energy barriers at the step edges (related to Schwoebel barriers 22 ), allowing an increasing incorporation rate on the step-down sites. The change in the step barrier energy has been explained via the formation of As-As dimmers.…”

Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

“…The reason may be that the excessively low V/III ratio may cause the decrease of the surface migration length of As 4 molecules and so lead to the local metallization of group III in the epitaxial layers. [8] With the V/III ratio increasing from 30 to 40, the electron concentration increases from 2.81×10 12 cm −2 to around 3.26×10 12 cm −2 while the electron mobility first increases and then decreases. This indicates that increasing the V/III ratio from 30 to 40 can improve the crystal quality of the material, and so increase the electron concentration and the electron mobility.…”

“…Figure 2 shows the surface morphology recorded on a 5µm×5µm area for the MMHEMTs with different V/III flux ratios. A typical cross-hatch pattern is generated by the semi periodic roughness in the [110] and [1][2][3][4][5][6][7][8][9][10] in-plane directions except in sample A. The cross-hatch is triggered by the continual introduction of strain and consequent relaxation by the nucleation of 60 • misfit dislocations from the graded In x Al 1−x As buffer layer.…”