2007 IEEE Conference on Electron Devices and Solid-State Circuits 2007
DOI: 10.1109/edssc.2007.4450271
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V<inf>TH</inf> -Extractors Based Readout Circuit of ISFET with Temperature Compensation

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“…where I ds is from Equations (5) and (11), and the gate voltage of the sensor is deduced as follows:…”
Section: Low-power and Temperature Drift Isfet Compensation Circuitmentioning
confidence: 99%
See 1 more Smart Citation
“…where I ds is from Equations (5) and (11), and the gate voltage of the sensor is deduced as follows:…”
Section: Low-power and Temperature Drift Isfet Compensation Circuitmentioning
confidence: 99%
“…In this work, we present a new circuit based on differential measurement (ISFET/ReFET) However, this type of sensor is strongly affected by the temperature variation. Therefore, several researchers [3][4][5][6][7] have proposed various temperature compensation systems such as the proper choice of a biasing current for a thermal working point to reduce the ISFET's temperature dependency [4]. Hence, the use of a junction diode Zener [4] for temperature compensation on a single ISFET sensor, the employment of an ISFET with a differential configuration (use of a differential amplifier) [8] that increases the immunity against temperature variation, or the combination of attenuators and a differential amplifier alongside with Caprio's quad [7] were used in order to enhance the temperature stability.…”
Section: Introductionmentioning
confidence: 99%