1998
DOI: 10.1007/s003400050544
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V:YAG - a new passive Q-switch for diode-pumped solid-state lasers

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Cited by 159 publications
(68 citation statements)
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“…Previous studies of V 3+ :YAG crystals showed that the V 3+ ions can occupy both tetrahedral and octahedral coordinated positions [3]. Peaks at 800, 1140, and 1320 nm on the…”
Section: Introductionmentioning
confidence: 95%
“…Previous studies of V 3+ :YAG crystals showed that the V 3+ ions can occupy both tetrahedral and octahedral coordinated positions [3]. Peaks at 800, 1140, and 1320 nm on the…”
Section: Introductionmentioning
confidence: 95%
“…Tetrahedral V 3+ in YAG has three absorption bands centered at 600, 800, and 1320 nm, which are attributed to spin allowed transitions from the 3 A 2 ͑ 3 F͒ ground state to the 3 T 1 ͑ 3 P͒, 3 T 1 ͑ 3 F͒, and 3 T 2 ͑ 3 F͒ levels, respectively; a weak and narrow absorption at 1140 nm is attributed to the spin forbidden transition 3 A 2 ͑ 3 F͒ to 1 E͑ 3 D͒. 5,8,9 Likewise, tetrahedral V 3+ in LiAlO 2 , LiGaO 2 , and SrAl 2 O 4 has three absorption bands centered ϳ550, 850, and 1350 nm, which are attributed to transitions from 3 A 2 ͑ 3 F͒ to 3 T 1 ͑ 3 P͒, 3 T 1 ͑ 3 F͒, and 3 T 2 ͑ 3 F͒ levels, respectively. 10 Optical transitions associated with octahedral V 3+ tend to occur at higher energies than tetrahedral V 3+ .…”
mentioning
confidence: 97%
“…This indicates that the three absorption bands belong to the same oxidation state, rather than two or more oxidation states which is commonly observed in transition metal doped glasses 2-4 and crystals. 5 The broadness of the PL spectra indicates that the vanadium ion is in a low crystal field site. A result of this is that the 3 T 2 ͑ 3 F͒ level, which is strongly dependent on crystal field strength, is the lowest energy level.…”
mentioning
confidence: 99%
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“…For passively Q-switching (PQS) operation of solidstate lasers at 1.3 μm, V 3 :YAG has some remarkable advantage owing to their excellent physical and optical properties, such as high ground-state absorption cross section (σ gsa ) of 7.2 × 10 −18 cm 2 and low residual absorption at 1.3 μm [14]. It has been demonstrated that V 3 :YAG can be an excellent saturable absorber (SA) for Nd lasers operated in the 1.3 μm [8,[15][16][17][18][19].…”
mentioning
confidence: 99%