1996
DOI: 10.1016/0040-6090(96)08641-5
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V1−xMoxO2 thermochromic films deposited by reactive magnetron sputtering

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Cited by 48 publications
(34 citation statements)
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“…For example, experiments showed that the difference of light transmittance between the metallic phase and the insulator phase became smaller in the doped samples, 14,36 as compared to the case of pure VO 2 . Such behavior was probably attributed to the increased carrier concentration introduced by doping atoms in the insulator phase.…”
Section: Optical Propertiesmentioning
confidence: 99%
“…For example, experiments showed that the difference of light transmittance between the metallic phase and the insulator phase became smaller in the doped samples, 14,36 as compared to the case of pure VO 2 . Such behavior was probably attributed to the increased carrier concentration introduced by doping atoms in the insulator phase.…”
Section: Optical Propertiesmentioning
confidence: 99%
“…The films exhibit clear changes in transmittance, especially in the range 3600-4000 cm − 1 . The variation of the transmittance arises due to the films change from a semiconductor phase to a metallic phase [16]. The data is summarized in the Table 1.…”
Section: Thermochromic Properties Of the Filmsmentioning
confidence: 99%
“…The range of metal ions that have been doped into the vanadium(IV) oxide lattice using PVD methods is not quite as extensive as those investigated with sol-gel and is mostly limited to those that are known to induce the largest decrease in the metal-to-semiconductor transition temperature, namely tungsten [12,34,35], and molybdenum [45][46]. Iron doping of vanadium (IV) oxide by PVD showed a minimum thermochromic transition temperature with 1.4 atom% Fe at 59 ºC on the heating cycle [10].…”
Section: Tc Coatingmentioning
confidence: 99%