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Sharma, Neeraj; Sood, Anoop K.; Bhatt, S. S.; Kalia, S. B.; Chaudhry, S. C.

doi:10.1023/a:1006979117187

Cited by 9 publications

(4 citation statements)

References 17 publications

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“…There is very little information on VF 2 (acac) 2 in the literature. However, VCl 2 (acac) 2 is used in the synthesis of other vanadium compounds. , The Sn(acac) 2 exposure may also lead to SnF(acac) species adsorbed on the VO 2 surface.…”

Section: Resultsmentioning

confidence: 99%

SF₄ as the Fluorination Reactant for Al₂O₃ and VO₂ Thermal Atomic Layer Etching

et al. 2019

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Thermal atomic layer etching (ALE) is an important technique for the precise isotropic etching of nanostructures. Thermal ALE of many materials can be achieved using a two-step fluorination and ligand-exchange reaction mechanism. Most previous thermal ALE processes have used HF as the fluorination reactant. Alternative fluorination reactants may be needed because HF is a weak nucleophilic fluorination reactant. Stronger fluorination agents may be required for the fluorination of some materials. To demonstrate the usefulness of SF 4 as an alternative to HF, thermal Al 2 O 3 ALE was compared using SF 4 or HF together with Sn(acac) 2 as the metal precursor for ligand exchange. SF 4 and HF were observed to behave similarly as fluorination reactants during Al 2 O 3 ALE. The mass gains during the initial SF 4 and HF exposures on Al 2 O 3 atomic layer deposition (ALD) films at 200 °C were comparable at 35 and 38 ng/cm 2 , respectively, using quartz crystal microbalance measurements. In addition, the etch rates were similar at 0.20 and 0.28 Å/cycle for Al 2 O 3 ALE using SF 4 and HF, respectively, at 200 °C. Thermal VO 2 ALE was also performed for the first time using SF 4 or HF and Sn(acac) 2 as the reactants. There was evidence that SF 4 is a stronger fluorination reactant than HF for VO 2 fluorination. The mass gains during the initial SF 4 and HF exposures on VO 2 ALD films were 38 and 20 ng/cm 2 , respectively, at 200 °C. Thermal VO 2 ALE also had a higher etch rate when fluorinating with SF 4 compared with HF. Etch rates of 0.30 and 0.11 Å/cycle were measured for VO 2 ALE using SF 4 and HF, respectively, together with Sn(acac) 2 at 200 °C. Fourier transform infrared experiments were also used to monitor fluorination of the Al 2 O 3 and VO 2 ALD films by SF 4 or HF. FTIR difference spectroscopy was used to observe the increase of Al−F and V−F stretching vibrations and the loss of the Al−O and VO/VO stretching vibrations for Al 2 O 3 and VO 2 , respectively, versus SF 4 or HF exposure at 200 °C. Additional absorbance features after fluorination of the Al 2 O 3 ALD films by SF 4 were consistent with SF x surface species. SF 4 is a useful fluorination agent for thermal ALE processes and can be used as an alternative to HF. In addition, SF 4 may be necessary when fluorination requires a stronger fluorination reactant than HF.

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Section: Resultsmentioning

confidence: 99%

SF₄ as the Fluorination Reactant for Al₂O₃ and VO₂ Thermal Atomic Layer Etching

et al. 2019

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“…Interest in 2-phenylphenol also stems from the fact that the ortho alkyl/aryl substituents show interesting coordination behavior, wherein the intermolecular dehydrogenation of the alkyl groups or the hydrogenation of the aryl rings or chelation via -arene interaction may result. In continuation of our earlier work on the synthesis of monooxovanadium(V) aryloxides [28][29][30], and considering the biological relevance of both vanadium and 2-phenylphenol, this work is aimed at the synthesis of the new monooxovanadium(V) complexes of 2-phenylphenol (figure 1) in order to have an insight into the coordination behavior of the ligand. As the activity of the bioactive ligands is known to increase on coordination with the metal ions, the complexes have also been screened against some pathogenic fungi, Candida albicans, Aspergillus niger, and Fusarium oxysporum and bacteria, namely, Escherichia coli and Staphylococcus aureus for assaying their antimicrobial activity.…”

Section: Introductionmentioning

confidence: 99%

Monooxovanadium(V) 2-phenylphenoxides: synthesis, characterization, and antimicrobial potential

Sharma

Thakur

Chaudhry

2010

Journal of Coordination Chemistry

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Monooxovanadium(V)complexes of the composition VOCl 3Àn (L) n (where L ¼ 2-phenylphenoxide ion; n ¼ 1-3) (1-3) have been synthesized in quantitative yields by the reaction of VOCl 3 with 2-phenylphenol in toluene. The characterization of the complexes has been accomplished by elemental analysis, molar conductance measurements, IR, 1 H-NMR, electronic, mass spectral, and thermal studies. The ligands as well as the complexes have been screened for their in vitro antimicrobial activity against the pathogenic bacteria Escherichia coli and Staphylococcus aureus and fungi Candida albicans, Aspergillus niger, and Fusarium oxysporum by a twofold serial dilution. An increase in the biocidal activity was observed for the vanadium complexes. The minimum inhibitory concentration (MIC) values were 6.25-25 mg mL À1 for complexes, relative to that of the free ligand of 25-50 mg mL À1 .

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“…Hence, in continuation of our work to expand the range of known non-oxovanadium(IV) complexes [25,26], in particular, by using substituted phenols, we report herein a facile synthetic route to non-oxovanadium(IV) complexes of 2-and 4-phenylphenols using VCl 2 (bzac) 2 as the vanadium precursor.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, characterization, electrochemical study, and antimicrobial activity of bis(benzoylacetonato) vanadium(IV) complexes of biphenylphenols

Sharma

Thakur

Chaudhry

2010

Journal of Coordination Chemistry

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New non-oxovanadium(IV) complexes of biphenylphenols, [VCl 2Àn (bzac) 2 (OAr 1,2 ) n ], have been synthesized in quantitative yields from the reaction of bis(benzoylacetonato) dichlorovanadium(IV) with the trimethylsilyl derivative of 2-and 4-phenylphenols in carbon tetrachloride. The complexes have been characterized by physicochemical, magnetic moment measurements, IR, mass spectra, and electrochemical studies. The thermal behavior of the complexes has been studied by TGA-DTA. The complexes have been screened for their antimicrobial activity against some pathogenic bacteria, Escherichia coli and Staphylococcus aureus and fungi, Candida albicans, Aspergillus niger, and Fusarium oxysporum, by two-fold serial dilution.

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Cited by 9 publications

References 17 publications

SF₄ as the Fluorination Reactant for Al₂O₃ and VO₂ Thermal Atomic Layer Etching

SF₄ as the Fluorination Reactant for Al₂O₃ and VO₂ Thermal Atomic Layer Etching

Monooxovanadium(V) 2-phenylphenoxides: synthesis, characterization, and antimicrobial potential

Synthesis, characterization, electrochemical study, and antimicrobial activity of bis(benzoylacetonato) vanadium(IV) complexes of biphenylphenols

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Untitled

Cited by 9 publications

References 17 publications

SF4 as the Fluorination Reactant for Al2O3 and VO2 Thermal Atomic Layer Etching

SF4 as the Fluorination Reactant for Al2O3 and VO2 Thermal Atomic Layer Etching

Monooxovanadium(V) 2-phenylphenoxides: synthesis, characterization, and antimicrobial potential

Synthesis, characterization, electrochemical study, and antimicrobial activity of bis(benzoylacetonato) vanadium(IV) complexes of biphenylphenols

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SF₄ as the Fluorination Reactant for Al₂O₃ and VO₂ Thermal Atomic Layer Etching

SF₄ as the Fluorination Reactant for Al₂O₃ and VO₂ Thermal Atomic Layer Etching