Vacancy aggregates in silicon

Hastings, Jeffrey L.; Estreicher, Stefan K.; Fedders, Peter A.

doi:10.1103/physrevb.56.10215

Cited by 143 publications

(109 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1a. The resulting structure and electronic Kohn-Sham levels, display a well defined band-gap, which are consistent with previous calculations [17]. This defect possibly possesses states in the gap very near the conduction band, but it is difficult to decide whether such near-conduction levels are localized on the defect in cluster calculations.…”

Section: Recentsupporting

confidence: 71%

Optically active hydrogen dimers in silicon

Hourahine¹,

Jones

Safonov

et al. 1999

Physica B: Condensed Matter

View full text Add to dashboard Cite

First principles calculations are used to explore the structure and properties of several defects which are prominent luminescent centers in Si. The trigonal defects B 41 and B 1 71 , which are known to contain two hydrogen atoms in equivalent and inequivalent sites respectively, are attributed to a hexavacancy containing two H atoms in different configurations. It is suggested that the J luminescence centers arises from a stable hexavacancy without hydrogen atoms.Hydrogen dimers were first suggested to exist in crystalline silicon in the form of molecules [1,2] sited at tetrahedral interstitial lattice-positions. These molecules have subsequently been observed in hydrogen-soaked [3] and low-temperature plasma-treated silicon [4] (the substrate is held at ≤ 150 • C during exposure). Higher temperature plasma-treatment instead forms hydrogen molecules inside platelet or void-like structures in the subsurface region of the silicon [4,5].There are several other di-hydrogen and multihydrogen defects known to form complexes with native defects in implanted or irradiated silicon. A large number of vacancy-hydrogen complexes of the form V m H n m = 1, n = 1 · · · 4; m = 2, n = 1 or 6, and m = 3 or 4 with n = 1 have been identified in proton-implanted silicon [6,7].Similarly, electron paramagnetic investigation of multivacancy centers in Si have identified V 1 , V 2 [8], V 3 , V 4 and V 5 [9]. The last has been correlated with the P 1 center and is a non-planar defect with C 1h symmetry. The larger vacancy centers are formed in irradiated material when subjected to a heat treatment. Thus V 5 is formed around 170 • C and is stable until ∼ 450 • C.Photoluminescence (PL) has revealed a large number of centers in silicon which has been treated by in-diffusion of hydrogen at high temperatures with a subsequent irradiation and heat treatment [10]. These centers were produced by irradiation with 6 × 10 17 cm −2 electrons, or 10 17 cm −2 thermal neutrons, of silicon which has been soaked in hydrogen, followed by annealing at ∼450 • C. RecentZeeman and uniaxial studies demonstrate that the PL centers which are produced by irradiation bind an exciton consisting of a electron in a deep (−/0) level near E c with a loosely bound hole [11,12]. These defects have labels of the form B x yz , which specifies the exciton binding energy associated with the strongest PL line as xy.z meV. So for example B 1 71 has an exciton binding energy of 17.1 meV, and a strong PL line at 1.138 eV. In addition some of the transitions have specific names, such as the family of J-lines which are different exciton states of the B 4 80 center giving a luminescence at around 1.108 eV [13,14].Studies using H and D mixtures demonstrated that some of these centers contain two hydrogen atoms. Zeeman splitting studies have shown that B 4 80 , B 41 , and B 1 71 possess trigonal symmetry. In the absence of experiments performed in an electric field, the question of whether the defects have a center of inversion has not been resolved. B 4 80 does not possess any hyd...

show abstract

Section: Recentsupporting

confidence: 71%

Optically active hydrogen dimers in silicon

Hourahine¹,

Jones

Safonov

et al. 1999

Physica B: Condensed Matter

View full text Add to dashboard Cite

show abstract

“…It is well known that in crystalline silicon, a vacancy defect is a kind of important intrinsic point defect. * E-mail: shuyingzhong@163.com So far, lots of reports have been related with the mechanical and electronic properties of the vacancy defects in crystalline silicon, which mainly referred to the defects of monovacancy, divacancy and hexavacancy [8][9][10][11][12]. Generally, the simplest monovacancy plays a key role in self-diffusion and impurity diffusion.…”

Section: Introductionmentioning

confidence: 99%

First-principle calculations of effective mass of silicon crystal with vacancy defects

Zhong

Lei

2016

Materials Science-Poland

View full text Add to dashboard Cite

The energy band structures and electron (hole) effective masses of perfect crystalline silicon and silicon with various vacancy defects are investigated by using the plane-wave pseudopotential method based on density functional theory. Our results show that the effect of monovacancy and divacancy on the energy band structure of crystalline silicon is primarily reflected in producing the gap states and the local states in valence band maximum. It also causes breaking the symmetry of energy bands resulting from the Jahn-Teller effect, while only producing the gap states for the crystalline silicon with hexavacancy ring. However, vacancy point defects could not essentially affect the effective masses that are derived from the native energy bands of crystalline silicon, except for the production of defect states. Simultaneously, the Jahn-Teller distortions only affect the gap states and the local states in valence band maximum, but do not change the symmetry of conduction band minimum and the nonlocal states in valence band maximum, thus the symmetry of the effective masses. In addition, we study the electron (hole) effective masses for the gap states and the local states in valence band maximum.

show abstract

“…In the initial Si, the cluster is surrounded by the repulsive barrier; therefore, the capture of a non-equilibrium hole makes this centre neutral, as observed experimentally. Other properties can be explained proposing a decrease of the effective bandgap in the cluster, which follows from analysis of multi-vacancy complexes [12]. Then the increase of compensation in the irradiated Si leads to the decrease of the space charge around the cluster and to the change of the cluster into an attractive centre if the Fermi level in the cluster becomes closer to the conduction band than in the bulk of the sample, as observed.…”

Section: Resultsmentioning

confidence: 99%

Deep level contribution to the carrier generation and recombination in high resistivity Si irradiated by neutrons

Bondzinskas¹,

Kažukauskas²,

Malinovskis³

et al. 2011

Lith. J. Phys.

View full text Add to dashboard Cite

Deep level spectroscopy in neutron irradiated FZ and MCz Si was performed by extrinsic photoconductivity spectra measurements in the range of temperature of 18-120 K. The lukovsky model was used, and the Gaussian distribution of deep level energy demonstrated the best fit of simulation and experimental data. The nonmonotonous change of deep levels during annealing, and non-monotonous dependence of their concentration on the fluence were observed. The photoconductivity decay was investigated by the transient photo-Hall effect, recombination parameters of the main recombination centre were determined, and the recombination centre model was proposed. The photoconductivity and thermally stimulated current measurements were used to demonstrate the existence of photogeneration of free carriers by a cascade of optical and thermal transitions.

show abstract

Vacancy aggregates in silicon

Cited by 143 publications

References 34 publications

Optically active hydrogen dimers in silicon

Optically active hydrogen dimers in silicon

First-principle calculations of effective mass of silicon crystal with vacancy defects

Deep level contribution to the carrier generation and recombination in high resistivity Si irradiated by neutrons

Contact Info

Product

Resources

About