Vacancy defects in<i>p</i>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">SiC</mml:mi></mml:math>created by low-energy electron irradiation

Bardeleben, H. J. von; Cantin, J. L.; Henry, L.; Barthe, M.F.

doi:10.1103/physrevb.62.10841

Cited by 69 publications

(50 citation statements)

References 11 publications

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“…The annealing of vacancy-related defects has been studied by positron annihilation spectroscopy (PAS) 11,12,13,14 and electron paramagnetic resonance techniques (EPR) 15,16,17,18 in irradiated material. The identification of the EPR-centers as isolated silicon 15,16 and carbon 18 vacancies has been verified theoretically.…”

Section: Introductionmentioning

confidence: 99%

Ab initiostudy of the migration of intrinsic defects in3C−SiC

2003

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The diffusion of intrinsic defects in 3C-SiC is studied using an ab initio method based on density functional theory. The vacancies are shown to migrate on their own sublattice. The carbon splitinterstitials and the two relevant silicon interstitials, namely the tetrahedrally carbon-coordinated interstitial and the 110 -oriented split-interstitial, are found to be by far more mobile than the vacancies. The metastability of the silicon vacancy, which transforms into a vacancy-antisite complex in p-type and compensated material, kinetically suppresses its contribution to diffusion processes. The role of interstitials and vacancies in the self-diffusion is analyzed. Consequences for the dopant diffusion are qualitatively discussed. Our analysis emphasizes the relevance of mechanisms based on silicon and carbon interstitials.

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Section: Introductionmentioning

confidence: 99%

Ab initiostudy of the migration of intrinsic defects in3C−SiC

2003

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“…11 Several DLTS studies of low-energy irradiated n-type 4H-SiC exhibit the above discussed EH1 and EH3 levels [12][13][14] (labeled ET1 and ET2 by Danno et al…”

Section: Introductionmentioning

confidence: 99%

Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

Beyer

Hemmingsson

Pedersen

et al. 2011

Journal of Applied Physics

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After low-energy electron irradiation of epitaxial n-type 4H-SiC with a dose of 5 Â 10 16 cm À2 , the bistable M-center, previously reported in high-energy proton implanted 4H-SiC, is detected in the deep level transient spectroscopy (DLTS) spectrum. The annealing behavior of the M-center is confirmed, and an enhanced recombination process is suggested. The annihilation process is coincidental with the evolvement of the bistable EB-centers in the low temperature range of the DLTS spectrum. The annealing energy of the M-center is similar to the generation energy of the EB-centers, thus partial transformation of the M-center to the EB-centers is suggested. The EB-centers completely disappeared after annealing temperatures higher than 700 C without the formation of new defects in the observed DLTS scanning range. The threshold energy for moving Si atom in SiC is higher than the applied irradiation energy, and the annihilation temperatures are relatively low, therefore the M-center, EH1 and EH3, as well as the EB-centers are attributed to defects related to the C atom in SiC, most probably to carbon interstitials and their complexes.

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“…Using low-energy electron irradiation, Steeds et al [50] were able to determine the displacement energies for C and Si atoms to be about 100 keV and 250 keV, respectively. In EPR studies of 6H-SiC irradiated with 350 keV electrons, von Bardeleben et al [51] have identified the Si Frenkel pair.…”

Section: Introductionmentioning

confidence: 98%