2015
DOI: 10.1088/0953-8984/28/1/015301
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Vacuum ultraviolet excitation luminescence spectroscopy of few-layered MoS2

Abstract: We report on vacuum ultraviolet (VUV) excited photoluminescence (PL) spectra emitted from a chemical vapor deposited MoS 2 few-layered film. The excitation spectrum was recorded by monitoring intensities of PL spectra at ~1.9 eV. A strong wide excitation band peaking at 7 eV was found in the excitation. The PL excitation band is most intensive at liquid helium temperature and completely quenched at 100 K. Through first-principles calculations of photoabsorption in MoS 2 , the excitation was explicated and attr… Show more

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Cited by 13 publications
(14 citation statements)
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“…This has been shown in the PDOS of two models where the MoS 2 side owns electronic structures similar to metals. Different from the structure of its semiconductive bulk counterpart in previous studies, the side surface of the MoS 2 has rich but not overlapped bands. Contact between the Ni metal and MoS 2 is metallic since significant electron state overlap was found, smearing the gap between conduction and valence bands and avoiding tunnel barriers.…”
Section: Discussioncontrasting
confidence: 73%
See 2 more Smart Citations
“…This has been shown in the PDOS of two models where the MoS 2 side owns electronic structures similar to metals. Different from the structure of its semiconductive bulk counterpart in previous studies, the side surface of the MoS 2 has rich but not overlapped bands. Contact between the Ni metal and MoS 2 is metallic since significant electron state overlap was found, smearing the gap between conduction and valence bands and avoiding tunnel barriers.…”
Section: Discussioncontrasting
confidence: 73%
“…Thus, contact instability and Schottky barriers with high contact resistance limit the performance of ILC‐based devices . As an intensively studied host matrix, molybdenum disulfide (MoS 2 ) is a cheap and abundant mineral compared with other TMDs, and is found promising in applications of transistors, optoelectronics, catalytic reactions, and even UV–vis light convertors . It has also been proposed as an alternative to traditional silicon‐based semiconductors due to the high mobility and on/off current ratios .…”
Section: Introductionmentioning
confidence: 99%
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“…Values for pristine layers were crosschecked with those given by the more precise and lengthy CASTEP package. It is worth mentioning that the validity of CASTEP was confirmed by experimental determination of the electronic structures and excitonic behaviors of the LTMD [30]. Thechemically robust clusters can bond to the low-dimensional ILCs, and bolster the complex stabilities.…”
Section: Introductionmentioning
confidence: 81%
“…shows that low-dimensional MoS2 is a good candidate for the ultrasensitive photodetector [29], and even applicable in detecting a UV photon by converting to visible emissions [30].…”
Section: Introductionmentioning
confidence: 99%