Vacuum Ultraviolet Photodetector with Low Dark Current and Fast Response Speed Based on Polycrystalline AlN Thin Film

Abstract

A metal–semiconductor–metal (MSM) vacuum ultraviolet (VUV) photodetector is realized on polycrystalline AlN film grown by molecular beam epitaxy. At a bias of 10 V, the dark current of the device is less than 120 fA and the VUV (185 nm) to Ultraviolet‐C (255 nm) rejection ratio is more than 103. More interestingly, the polycrystalline AlN photodetector shows an ultra‐fast response speed with a 90%–10% decay time of ≈50 ns, which is much quicker than any other previously reported AlN VUV photodetectors. Furthermore, the device still maintains stability and repeatability at 473 K. This research shows that polycrystalline AlN photodetector has good photodetection performance, which will help advance the design and preparation of AlN‐based VUV photodetectors.

Metal Work Function Effects on the Performance of UV–Visible–NIR Cs2SnI6 Photodetectors for Flexible Broadband Application

“…[6] The highest photocurrent was achieved in the visible region (Figure 3a-c). The photoresponsivity (R ph ) and specific detectivity (D ph ) are calculated by using the following formula [6,51] R ph ¼ I ph P in  A…”

“…[ 6 ] The highest photocurrent was achieved in the visible region (Figure 3a–c). The photoresponsivity ( R ph ) and specific detectivity ( D ph ) are calculated by using the following formula [ 6,51 ] where I l is current under light, I d is current under dark, R ph is photoresponsivity (A W −1 ), D ph is specific detectivity, and P in is illuminated input power of light sources (mW cm −2 ), respectively.…”

Oxygen reduction through specific surface area control of AlN powder for AlN single-crystal growth by physical vapor transport

“…In recent years, aluminum nitride (AlN) single-crystal substrate with excellent properties, such as wide bandgap, high thermal conductivity, little lattice, and thermal mismatch with nitrides, has drawn much attention because of its wide applications in military and civilian fields [1][2][3][4][5]. Due to the applications of aluminum nitride single-crystal substrates in lasers, sensors, LEDs, and power electronic devices [6][7][8][9][10], 1 These two authors contributed equally to this work. * Authors to whom any correspondence should be addressed.…”