Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics

King, Sean W.; Paquette, Michelle M.; Otto, Joseph W.; Caruso, Anthony N.; Brockman, Justin; Bielefeld, J.; French, Marc; Kühn, Markus; French, Benjamin

doi:10.1063/1.4867890

Cited by 19 publications

(14 citation statements)

References 47 publications

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“…38 Using the above band alignment for the AlN/Si interface and prior measurements of the GaN/AlN band alignment, 30 the VBO at a GaN/Si interface can additionally be estimated using the rules of transitivity and commutativity. 41,42 The transitive and commutative rules for VBOs, respectively, state that…”

Section: Resultsmentioning

confidence: 99%

Band alignment at AlN/Si (111) and (001) interfaces

King

Nemanich

Davis

2015

Journal of Applied Physics

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Articles you may be interested inSmall valence-band offset of In 0.17 Al 0.83 N / GaN heterostructure grown by metal-organic vapor phase epitaxy Appl. Phys. Lett. 96, 132104 (2010); 10.1063/1.3368689 Band discontinuity in the GaAs/AlAs interface studied by in situ photoemission spectroscopy AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fieldsDependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstructionTo advance the development of III-V nitride on silicon heterostructure semiconductor devices, we have utilized in-situ x-ray photoelectron spectroscopy (XPS) to investigate the chemistry and valence band offset (VBO) at interfaces formed by gas source molecular beam epitaxy of AlN on Si (001) and (111) substrates. For the range of growth temperatures (600-1050 C) and Al pre-exposures (1-15 min) explored, XPS showed the formation of Si-N bonding at the AlN/Si interface in all cases. The AlN/Si VBO was determined to be À3.5 6 0.3 eV and independent of the Si orientation and degree of interfacial Si-N bond formation. The corresponding AlN/Si conduction band offset (CBO) was calculated to be 1.6 6 0.3 eV based on the measured VBO and band gap for wurtzite AlN. Utilizing these results, prior reports for the GaN/AlN band alignment, and transitive and commutative rules for VBOs, the VBO and CBO at the GaN/Si interface were determined to be À2.7 6 0.3 and À0.4 6 0.3 eV, respectively. V C 2015 AIP Publishing LLC.

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Section: Resultsmentioning

confidence: 99%

Band alignment at AlN/Si (111) and (001) interfaces

King

Nemanich

Davis

2015

Journal of Applied Physics

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“…434,436 For this reason, B 2 O 3 is likely unsuitable for low-k interconnect applications. Boron nitride (BN) does not exhibit the same extreme hygroscopic behavior as B 2 O 3 and has been investigated for numerous electronic applications as a gate dielectric, 437 ILD, 434 ES, 438 DB, 439 HM, 440 polish stop, 441 and UV photo-detector / light emitting diode.…”

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confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

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133

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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“…cBN is the second hardest known material after diamond and thus expected principally as an ultrahard coating for mechanical tools. hBN is intrinsically an insulating material that has large bandgap (5.97 eV), low dielectric constant, high breakdown field, and negative electron affinity . Thus, hBN can potentially be applied for electronic and optoelectronic devices including ultraviolet light lasers, interlayer insulating films for large‐scale integrated circuits, and semiconductors/dielectrics for power devices …”

Section: Introductionmentioning

confidence: 99%

“…For this sake, controlling ion bombardment onto the substrate is necessary. The majority of research used no or very low‐energy (below ∼20 eV) ion bombardment without substrate bias . In contrast, low‐energy (∼20 to 200 eV) ions, just above a typical threshold of subplantation, have much less been used although they can potentially produce a dense phase while maintaining high crystallinity.…”

Section: Introductionmentioning

confidence: 99%

Effect of low‐energy ion impact on the structure of hexagonal boron nitride films studied in surface‐wave plasma

Torigoe

Kamimura

Teii

et al. 2018

Surface & Interface Analysis

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A high‐density surface‐wave plasma source is used to deposit hexagonal boron nitride (hBN) films in a gas mixture of He, H2, N2, Ar, and BF3 under a high ion flux condition using low‐energy ion irradiation. The ion energy is controlled between around zero and 100 eV by applying a negative or positive bias voltage to a substrate, while the ion flux is increased by locating a substrate upstream in the diffusive plasma. For ion energies above ∼37 eV, the structure of the films depends upon ion energy more than substrate temperature, typical of subplantation processes. As a result, the structural order and crystallinity of sp2‐bonded phase in the films characterized by Fourier transform infrared spectroscopy and X‐ray diffraction are increased with decreasing ion energy, while the mass density of the films characterized by X‐ray reflectivity is retained relatively high with a slight dependence upon ion energy.

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Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics

Cited by 19 publications

References 47 publications

Band alignment at AlN/Si (111) and (001) interfaces

Band alignment at AlN/Si (111) and (001) interfaces

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Effect of low‐energy ion impact on the structure of hexagonal boron nitride films studied in surface‐wave plasma

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