Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition

Abstract

An ab-initio study of electronic and optical properties of corundum Al2O3 doped with Sc, Y, Zr, and Nb J. Appl. Phys. 112, 093709 (2012) Evidence of Eu2+ 4f electrons in the valence band spectra of EuTiO3 and EuZrO3 J. Appl. Phys. 112, 083719 (2012) Model GW study of the late transition metal monoxides J. Chem. Phys. 137, 154110 (2012) First-principles study of electronic structure and magnetic properties of Cu-doped CeO2 J. Appl. Phys. 112, 083702 (2012) Electronic structure and optical band gap of CoFe2O4 thin films

Measurement of interface-state-density distribution near conduction band at interface between atomic-layer-deposited Al2O3 and silicon-doped InAlN

“…5 using reported bandgap values [9][10][11] and our measurement results for DE V at the Al 2 O 3 /InAlN and InAlN/GaN interfaces. 8,12 The E CNL position is also indicated in Fig. 4, which clarifies that the interface states that increased steeply toward E C should have produced the negative charge to block the shift of E Fsurf toward E C , in accordance with the positive bias.…”

Band alignment between GaN and ZrO2 formed by atomic layer deposition

“…In this Letter, DE C at the interface between atomic-layer-deposited (ALD) ZrO 2 and Ga-face GaN was estimated by XPS measurements. Instead of using the conventional XPS measurement with a fixed take-off angle h, which could be erroneous due to strong band bending at GaN surface and possible potential gradient existed in ZrO 2 dielectric layer, angle resolved XPS measurements combined with numerical calculations [9][10][11] were carried out in this work to ensure a better prediction of DE C at ZrO 2 /GaN interface.…”

Effect of Insertion of Ultrathin Al2O3 Interlayer at Metal/GaN Interfaces

“…On the basis of the disorder‐induced gap state (DIGS) model, the Fermi level pinning is caused by interface disorder, which generates the interface states. According to an X‐ray photoelectron spectroscopy study reported elsewhere, the chemical bonds at the topmost surface of the ALD Al 2 O 3 layer exhibit a different component from those existing inside the bulk Al 2 O 3 . The Al 2 O 3 surface may be chemically instable.…”