Valence-band photoemission from the GaN(0001) surface

Strasser, T.A.; Solterbeck, C.‐H.; Starrost, F.; Schattke, W.

doi:10.1103/physrevb.60.11577

Cited by 39 publications

(43 citation statements)

References 19 publications

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“…3a). Our FLAPW band structure of the GaNð0001Þð1 Â 1Þ : Ga surface confirm the previous results obtained from empirical calculations based on the extended H€uckel method [53], and recent ab initio pseudopotentials study [51].…”

Section: Atomic and Electronic Structuressupporting

confidence: 79%

Ab initio Theory of Second Harmonic Generation from Semiconductor Surfaces and Interfaces

Гавриленко¹

2001

phys. stat. sol. (a)

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Predictions of second harmonic generation (SHG) from semiconductor surfaces and interfaces, based on first principles evaluation of eigen-value and eigen-vector problems using full potential linearized augmented plane wave (FLAPW) and ab initio pseudopotential (PP) approaches, are discussed. Effects of rehybridization of atomic bonds and electric field induced second harmonic (EFISH) response are considered. Strong contributions to the SHG efficiency of electron excitations from surface atom orbitals are demonstrated for Si(001) and GaN(0001) surfaces and the Ge/Si(001) interface. The predicted spectroscopic SHG results are discussed in comparison with experiment.

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Section: Atomic and Electronic Structuressupporting

confidence: 79%

Ab initio Theory of Second Harmonic Generation from Semiconductor Surfaces and Interfaces

Гавриленко¹

2001

phys. stat. sol. (a)

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“…The amount of experimental data concerning the (0 0 0 1 1) (N-polar) surface is still rather limited [18][19][20][21]. Experimental results concerning electronic states distribution of GaN can be compared with the set of calculated band structures obtained by means of various methods [22][23][24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

“…Comparison of the data collected before and after Ga deposition enabled us to identify surface-related spectral features.The angle-resolved photoemission experiments performed with photons of 25-80 eV enabled us to do mapping of the whole Brillouin zone in the C-A and C-K-M directions. Simultaneously, such selection of photon energies provided direct comparison of the acquired spectra with those calculated by Strasser et al [25] for the GaN(0 0 0 1 1)-(1 · 1) surface terminated by an adlayer of Ga. The experimental band structure diagrams derived from the collected data were also compared with the results of calculations referred to the surface structure of GaN(0 0 0 1 1) [25][26][27].…”

Section: Introductionmentioning

confidence: 99%

“…Simultaneously, such selection of photon energies provided direct comparison of the acquired spectra with those calculated by Strasser et al [25] for the GaN(0 0 0 1 1)-(1 · 1) surface terminated by an adlayer of Ga. The experimental band structure diagrams derived from the collected data were also compared with the results of calculations referred to the surface structure of GaN(0 0 0 1 1) [25][26][27].…”

Section: Introductionmentioning

confidence: 99%

“…In [20], we reported on preliminary results obtained for higher photon energies (25-80 eV) and a brief analysis of the spectra was given. Interpretation of the results was based mainly on comparison with calculated photoemission spectra [25]. Some surface related features were identified.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electronic structure of GaN(000)-(1×1) surface

et al. 2004

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Drastic change in electronic structure of AlGaN under Ba adsorption

Benemanskaya

Timoshnev

Иванов

et al. 2013

Phys. Status Solidi C

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A synchrotron‐radiation photoemission spectroscopy is applied to the clean and Ba‐deposited AlGaN(0001) surfaces to investigate the interface electronic structure relevant to both the surface states and an electron accumulation layer and to clarify their origins. Valence‐band photoemission and Ga 3d, Al 2p, Ba 4d core level spectra of AlxGa1‐xN (x=0.16, x=0.42) have been studied under the step‐by‐step Ba submonolayer deposition. The clean n ‐Al0.16Ga0.84N surface exhibits the surface states at energies of 2.8 eV, 5.5 eV, and 7.8 eV with respect to the valence band maximum, while the states for the clean Al0.42Ga0.58N surface are at higher energies of 3.9 eV, 5.6 eV, and 8.2 eV. Drastic change in the valence band spectra is revealed and it is showed that narrowing of valence band and suppression of surface states occur with increasing Ba coverage. The appearance of a new photoemission peak at the Fermi level clearly indicates the creation of the accumulation layer on the n ‐Al0.16Ga0.84N surface under the Ba adsorption. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Valence-band photoemission from the GaN(0001) surface

Cited by 39 publications

References 19 publications

Ab initio Theory of Second Harmonic Generation from Semiconductor Surfaces and Interfaces

Ab initio Theory of Second Harmonic Generation from Semiconductor Surfaces and Interfaces

Electronic structure of GaN(000)-(1×1) surface

Drastic change in electronic structure of AlGaN under Ba adsorption

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