1992
DOI: 10.1103/physrevb.45.6637
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Valence-band splitting in orderedGa0.5In0.5P studied by tempera

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Cited by 98 publications
(35 citation statements)
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“…8 -12͒ causes charge accumulation. In this ordering, monolayers of GaP-rich and InP-rich atomic planes alternatively appear along ͓1 11͔ or ͓11 1͔, which can be expressed by using order parameter as Ga 0.5ϩ/2 In 0.5Ϫ/2 P/Ga 0.5Ϫ/2 In 0.5ϩ/2 P. 8,10,11 Therefore, macroscopic polarization, which is originated from the piezoelectric effect [13][14][15] and microscopic spontaneous polarization, 5 is induced in the ordered Ga 0.5 In 0.5 P. In a GaAs/Ga 0.5 In 0.5 P/GaAs double heterostructure, 2,4,5 this macroscopic polarization causes negative and positive sheet charges at both the edges of Ga 0.5 In 0.5 P layer of the GaAs/Ga 0.5 In 0.5 P and Ga 0.5 In 0.5 P/GaAs interfaces, respectively. In the Ga 0.5 In 0.5 P/GaAs single heterostructure, it has been reported that electron accumulation occurs in the GaAs side.…”
Section: Introductionmentioning
confidence: 99%
“…8 -12͒ causes charge accumulation. In this ordering, monolayers of GaP-rich and InP-rich atomic planes alternatively appear along ͓1 11͔ or ͓11 1͔, which can be expressed by using order parameter as Ga 0.5ϩ/2 In 0.5Ϫ/2 P/Ga 0.5Ϫ/2 In 0.5ϩ/2 P. 8,10,11 Therefore, macroscopic polarization, which is originated from the piezoelectric effect [13][14][15] and microscopic spontaneous polarization, 5 is induced in the ordered Ga 0.5 In 0.5 P. In a GaAs/Ga 0.5 In 0.5 P/GaAs double heterostructure, 2,4,5 this macroscopic polarization causes negative and positive sheet charges at both the edges of Ga 0.5 In 0.5 P layer of the GaAs/Ga 0.5 In 0.5 P and Ga 0.5 In 0.5 P/GaAs interfaces, respectively. In the Ga 0.5 In 0.5 P/GaAs single heterostructure, it has been reported that electron accumulation occurs in the GaAs side.…”
Section: Introductionmentioning
confidence: 99%
“…However, it has been proposed that some ternary semiconductors can deviate from this assumed perfect solid solution. Indeed, both calculations and experiments suggested the presence of local atomic order in certain III-V alloys [1][2][3][4][5][6][7][8]. This phenomenon manifests itself when at least one of the elements forming the alloy preferentially occupies or avoids specific lattice sites.…”
mentioning
confidence: 99%
“…This phenomenon manifests itself when at least one of the elements forming the alloy preferentially occupies or avoids specific lattice sites. This induces short-range order in the lattice with an impact on the basic properties of the alloyed semiconductors [3][4][5][6][7].…”
mentioning
confidence: 99%
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“…[1][2][3][4][5][6][7][8][9][10] The long-range ordering of the column III sublattice appears in Ga 0.5 In 0.5 P epitaxial films grown on GaAs ͑001͒ by organometallic vapor-phase epitaxy ͑OM-VPE͒. The epitaxial alloys consist of two ordered phases that show the CuPt-like ordering along the ͓111͔ and ͓111͔, i.e., ͓111͔ and ͓111͔ monolayer superlattices ͑MSLs͒.…”
mentioning
confidence: 99%