2009
DOI: 10.2478/s11534-009-0061-5
|View full text |Cite
|
Sign up to set email alerts
|

Valence intersubband gain without population inversion

Abstract: Abstract:Terahertz gain without population inversion is studied in thin III-V semiconductor quantum wells. Nonequilibrium hole populations leading to intervalence gain in the transverse electric mode are investigated. The results are obtained with a Keldysh Nonequilibrium Green's Functions approach that takes into account bandstructure, manybody and nonequilibrium effects.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

1
1
0

Year Published

2009
2009
2009
2009

Publication Types

Select...
1
1

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(2 citation statements)
references
References 24 publications
1
1
0
Order By: Relevance
“…On the other hand, the material parameters for the III-V system investigated here are very well known. This review complements the results given recently in [18], [19] comparing and contrasting the results for two different well widths.…”
Section: Lasing Without Population Inversionsupporting
confidence: 77%
See 1 more Smart Citation
“…On the other hand, the material parameters for the III-V system investigated here are very well known. This review complements the results given recently in [18], [19] comparing and contrasting the results for two different well widths.…”
Section: Lasing Without Population Inversionsupporting
confidence: 77%
“…The valence bands in contrast have typically lower averaged effective masses in the upper lasing subband which is an advantage. However, as the nonparabolicity can be in some cases so strong that an effective mass does not make sense and the full dispersions must be used, which can complicate the numerical calculations enormously, specially if many particle and dephasing effects are taken into account [18], [19].…”
Section: Numerical Results and Discussionmentioning
confidence: 99%