Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation

Abstract

The cubic form of SiC (βor 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H-and 6H-SiC, has lower growth cost and can be grown heteroepitaxially in large area Silicon (Si) wafers which makes it of special interest. This in conjunction with the recently reported growth of improved quality 3C-SiC, make the development of devices an imminent objective. However, the readiness of models that accurately predict the material characteristics, properties and performance is an imperative requirement for attaining the design and optimization of functional devices. The purpose of this study is to provide and validate a comprehensive set of models alongside with their parameters for bulk 3C-SiC. The validation process revealed that the proposed models are in a very good agreement to experimental data and confidence ranges were identified. This is the first piece of work achieving that for 3C-SiC. Considerably, it constitutes the necessary step for Finite Element Method (FEM) simulations and Technology Computer Aided Design (TCAD).

Modeling of temperature dependence of holes mobility in silicon carbide

“…Модель Arora, характеризующаяся повышенной точностью, была предложена в работе [10]. В настоящее время она находит широкое применение при моделировании подвижности дырок во всех трёх рассматриваемых политипах SiC [11][12][13].…”

“…Следует отметить, что в работе [7] подвижность дырок описана как функция N A . Однако подавляющее большинство современных авторов указывает на то, что подвижность (как дырок, так и электронов) является функцией суммы N A + N D [9,11,12].…”

TCAD Device Modelling and Simulation of Wide Bandgap Power Semiconductors

“…The corresponding values required in a physics parameter file for 4H-SiC were developed and improved alongside the improvement of the technology. Recently there have been efforts to compile an equivalent set of parameters for 3C and to validate them [12,13]. This section presents the required models and the parameters of both materials.…”

“…However, the values adopted in Table 5 are suggested from recent measurements [16,17]. The mobility of carriers for the temperature range of 250-700 K was described in [12]. In high field conditions, with magnitude of values as shown in Figure 7, the mobility and velocity of carriers become inseparable directly affecting each other.…”

“…In Eq. (8), the holes' saturation velocity determines the range of electric field values at 200 kV/cm < E < 2000 kV/cm [12]. .…”