Validation of a Rapid Thermal Processing model in steady-state

Logerais, Pierre‐Olivier; Chapron, D.; Garnier, Jérôme; Bouteville, A.

doi:10.1016/j.mee.2008.07.012

Cited by 11 publications

(13 citation statements)

References 8 publications

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“…An example of confrontation of temperature profiles is shown in figure 2. Similar results are obtained for the other lamp powers (see [7,13]). The experimental temperatures of the infrared lamp filaments evaluated from the Ohm law and the ones used in the numerical calculations match with a difference inferior to 5% for the 3D model and less than 9% for the 2D one.…”

Section: Numerical Simulationssupporting

confidence: 84%

“…Their validity has been acquired by confronting in the steady-state the numerical simulation results to measurements of the wafer temperature for five electric power values supplied to the infrared lamps ranging from 10 to 30% [7,13]. The experimental wafer temperature profiles have been found in good agreement with the numerically calculated ones with a relative temperature difference inferior to 1% in most cases.…”

Section: Numerical Simulationsmentioning

confidence: 88%

“…Orders of magnitude are given for these properties which vary with temperature [7]. The thermal conductivity of quartz is weak and its specific heat is elevated.…”

Section: Modification Of the Thermal Diffusivitymentioning

confidence: 99%

“…The present study utilizes the simulation approach to grasp better the relationship between the heating of infrared lamps and the thermal profile of the silicon substrate. In order to do it, a validated rapid thermal system model is considered [7]. The results of the first simulations have demonstrated that the differences in temperature of the quartz window have an influence on the temperature homogeneity of the silicon wafer [8,9].…”

mentioning

confidence: 99%

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Influence of the Window Thermal Diffusivity on the Silicon Wafer Temperature in a Rapid Thermal System

Logerais

Khelalfa

Riou

et al. 2015

Heat Transfer Engineering

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Section: Numerical Simulationssupporting

confidence: 84%

Section: Numerical Simulationsmentioning

confidence: 88%

“…Orders of magnitude are given for these properties which vary with temperature [7]. The thermal conductivity of quartz is weak and its specific heat is elevated.…”

Section: Modification Of the Thermal Diffusivitymentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Influence of the Window Thermal Diffusivity on the Silicon Wafer Temperature in a Rapid Thermal System

Logerais

Khelalfa

Riou

et al. 2015

Heat Transfer Engineering

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“…To continue all these efforts, in a previous work, we (Logerais et al) modelled an RTP equipment [14]. As the lamp filament consists of a large number of turns which are very close one to the other, its representation in three dimensions has been approximated by a hollow cylinder with an imposed uniform temperature in its outer surface.…”

Section: Nomenclaturementioning

confidence: 99%

Modelling of an infrared halogen lamp in a rapid thermal system

Logerais

Bouteville

2010

International Journal of Thermal Sciences

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Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

Logerais

Riou

Delaleux

et al. 2015

Applied Thermal Engineering

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Rapid thermal processes are used in various key stages in the microelectronics industry. In this study, the heat transfer in a rapid thermal system is modelled with the finite volume method. The influence of the radiative properties of the quartz window on the thermal profile of the silicon wafer is first investigated. The obtained temperatures are interpreted by analyzing the radiative properties according to wavelength and temperature. The wafer temperature profile for a non-optimized heating in steady-state is explained by a four-phase scheme where the radiative heat fluxes are depicted. From this scheme, a filter on the underside of the quartz window is envisaged to achieve temperature uniformity for the wafer. Two configurations are tested, one where the filter covers the entire lower surface of the quartz window and another where it is placed in a ring close to the reactor wall to confine the infrared radiations with wavelengths beyond 2.6 mm in order to raise the temperature at the edge of the wafer. Simulations demonstrate that the latter modification enables a more significant improvement of the wafer temperature homogeneity with less than 1% dispersion. The implementation of the filtering window is also discussed.

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Validation of a Rapid Thermal Processing model in steady-state

Cited by 11 publications

References 8 publications

Influence of the Window Thermal Diffusivity on the Silicon Wafer Temperature in a Rapid Thermal System

Influence of the Window Thermal Diffusivity on the Silicon Wafer Temperature in a Rapid Thermal System

Modelling of an infrared halogen lamp in a rapid thermal system

Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window

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