Valley and spin dependent group delay time in silicene superlattice

Sattari, Farhad

doi:10.1016/j.physb.2020.412354

Cited by 4 publications

(1 citation statement)

References 42 publications

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“…In particular, we can design periodic arrangements by the repetition of a unit cell composed of ferromagnetic and normal gates. The typical unit cell is structured with one FM and one NM [14][15][16][17][18][19]. This simple unit cell gives rise to large regions with effective spin-valley polarization modulated by the exchange field [20,21].…”

Section: Introductionmentioning

confidence: 99%

Spin-valley polarization and tunneling magnetoresistance in monomer, dimer, and trimer magnetic silicene superlattices

Rojas-Briseño,

Villasana-Mercado,

Molina-Valdovinos

et al. 2024

J. Phys.: Condens. Matter

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Monomer, dimer and trimer semiconductor superlattices are an alternative for bandgap engineering due to the possibility of duplicate, triplicate and in general multiply the number of minibands and minigaps in a speciﬁc energy region. Here, we show that monomer, dimer and trimer magnetic silicene superlattices (MSSLs) can be the basis for tunable magnetoresistive devices due to the multiplication of the peaks of the tunneling magnetoresistance (TMR). In addition, these structures can serve as spin-valleytronic devices due to the formation of two well-deﬁned spin-valley polarization states by adjusting appropriately the superlattice structural parameters. We obtain these conclusions by studying the spin-valley polarization and TMR of monomer, dimer and trimer MSSLs. The magnetic unit cell is structured

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