2020
DOI: 10.1109/tnano.2020.3012550
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Valley-Coupled-Spintronic Non-Volatile Memories With Compute-In-Memory Support

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Cited by 11 publications
(30 citation statements)
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“…3. Addition schemes in STT-CiM series [26], [27], [28], ParaPIM series [29], [30], GraphS series [31], [32], [33] IMC designs and our proposed FAT.…”
Section: B In-memory-computing Accelerators For Quantized Cnnsmentioning
confidence: 99%
See 1 more Smart Citation
“…3. Addition schemes in STT-CiM series [26], [27], [28], ParaPIM series [29], [30], GraphS series [31], [32], [33] IMC designs and our proposed FAT.…”
Section: B In-memory-computing Accelerators For Quantized Cnnsmentioning
confidence: 99%
“…Also, addition operations have replaced the multiplications for higher performance in TWNs, but the addition operations in existing IMC devices are not efficient. The mainstream STT-CiM series [26], [27], [28], ParaPIM series [29], [30], and GraphS series [31], [32], [33] designs are excellent traditional IMC architectures or application-specific accelerators, but their addition schemes are not efficient. They either need to wait for the carry propagating to the last bit or write back the carry to the memory cells and read out the carry back and forth.…”
Section: Introductionmentioning
confidence: 99%
“…3. Addition schemes in STT-CiM series [29], [30], [31], ParaPIM series [32], [33], GraphS series [34], [35], [36] IMC devices and our proposed FAT.…”
Section: B In-memory-computing Accelerators For Quantized Cnnsmentioning
confidence: 99%
“…Also, addition operations have replaced the multiplications for higher performance in TWNs, but the addition operations in existing IMC devices are not efficient. The mainstream STT-CiM series [29], [30], [31], ParaPIM series [32], [33] and GraphS series [34], [35], [36] devices are excellent IMC designs in general-purpose and application-specific domains, but their addition schemes are not efficient. They either need to wait for the carry propagating to the last bit or write back the carry to the memory cells and read out the carry back and forth.…”
Section: Introductionmentioning
confidence: 99%
“…However, when entering into the deca-nanometer regime CMOS downscaling becomes more difficult due to: (i) leakage wall 4,5 , (ii) reliability wall 6 , and (iii) cost wall 4,6 , which suggests the near end of Moore's law. As a result, different technologies, e.g., graphene [7][8][9][10][11] , memristor [12][13][14][15][16] , spintronics [17][18][19][20][21] have been explored in an attempt to meet the exponentially increasing computing market demands 22 .…”
Section: Introductionmentioning
confidence: 99%