van der Waals Epitaxial Growth of Graphene on Sapphire by Chemical Vapor Deposition without a Metal Catalyst

Hwang, Jeonghyun; Kim, Moon-Kyung; Campbell, Dorr; Alsalman, Hussain; Kwak, Joon Young; Shivaraman, Shriram; Woll, Arthur R.; Singh, Arunima K.; Hennig, Richard G.; Gorantla, Sandeep; Rümmeli, Mark H.; Spencer, Michael G.

doi:10.1021/nn305486x

Cited by 222 publications

(220 citation statements)

References 55 publications

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“…Without a metal catalyst, graphene growth requires higher temperature. Several pioneering studies toward direct growth of graphene on dielectric substrates have been reported, which need higher temperature in the range from 1100 to 1650 °C 17, 18, 19…”

Section: Introductionmentioning

confidence: 99%

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

et al. 2016

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Graphene and its derivatives hold a great promise for widespread applications such as field‐effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low‐cost, scalable, and controllable manner. Plasma‐enhanced chemical vapor deposition (PECVD) is a low‐temperature, controllable, and catalyst‐free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.

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Section: Introductionmentioning

confidence: 99%

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

et al. 2016

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“…The growth of large‐area high‐quality graphene films is fundamental for the upcoming graphene applications. Chemical vapour deposition (CVD) method offers good prospects to produce large‐size graphene films due to its simplicity, controllability and cost‐efficiency 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75. Many researches have verified that graphene can be catalytically grown on metallic substrates, like ruthenium (Ru),13, 14 iridium (Ir),15, 16 platinum (Pt),17, 18, …”

Section: Introductionmentioning

confidence: 99%

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Zhang

Qiu

et al. 2017

Advanced Science

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The exceptional properties of graphene make it a promising candidate in the development of next‐generation electronic, optoelectronic, photonic and photovoltaic devices. A holy grail in graphene research is the synthesis of large‐sized single‐crystal graphene, in which the absence of grain boundaries guarantees its excellent intrinsic properties and high performance in the devices. Nowadays, most attention has been drawn to the suppression of nucleation density by using low feeding gas during the growth process to allow only one nucleus to grow with enough space. However, because the nucleation is a random event and new nuclei are likely to form in the very long growth process, it is difficult to achieve industrial‐level wafer‐scale or beyond (e.g. 30 cm in diameter) single‐crystal graphene. Another possible way to obtain large single‐crystal graphene is to realize ultrafast growth, where once a nucleus forms, it grows up so quickly before new nuclei form. Therefore ultrafast growth provides a new direction for the synthesis of large single‐crystal graphene, and is also of great significance to realize large‐scale production of graphene films (fast growth is more time‐efficient and cost‐effective), which is likely to accelerate various graphene applications in industry.

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“…Graphene (an individual sheet of sp 2 hybridized carbon) can be produced by bottom-up approaches, that include epitaxial growth techniques, polymerization of molecules [1][2][3], or top-down methods consisting of delaminating graphite crystals [4]. However, the latter method could result in different graphene-like materials including pristine graphene (PG), produced through liquid phase exfoliation [5,6], and graphene oxide (GO), synthesized by chemical intercalation and the subsequent oxidation of graphitic materials (e.g.…”

Section: Introductionmentioning

confidence: 99%

Towards the understanding of the graphene oxide structure: How to control the formation of humic- and fulvic-like oxidized debris

Rodriguez-Pastor

Ramos-Fernández

Varela-Rizo

et al. 2015

Carbon

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Please cite this article as: Rodriguez-Pastor, I., Ramos-Fernandez, G., Varela-Rizo, H., Terrones, M., Martin-Gullon, I., Towards the understanding of the graphene oxide structure: How to control the formation of humic-and fulviclike oxidized debris, Carbon (2014), doi: http://dx.doi.org/10.1016/j.carbon. 2014.12.027 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. Abstract Former structural models of graphene oxide (GO) indicated that it consists of graphenelike sheets with oxygen groups, and no attention was paid to the resulting sheet size. We now provide evidence of the complex GO structure consisting of large and small GO sheets (or oxidized debris). Different oxidation reactions were studied. KMnO 4 derived GO consists of large sheets (20-30 wt. %), and oxidized debris deposits, which are formed by humic-and fulvic-like fragments. Large GO sheets contain oxygen groups, especially at the edges, such as carbonyl, lactone and carboxylic groups. Humic-like debris consists of an amorphous gel containing more oxygenated groups and trapped water molecules. The main desorbable fraction upon heating is the fulvic-like material, which contains oxygen groups and fragments with high edge/surface ratio. KClO 3 in HNO 3 or the Brodie method produces a highly oxidized material but at the flake level surface only; little oxidized debris and water contents are found. It is noteworthy that an efficient basal cutting of the graphitic planes in addition to an effective intercalation is caused by KMnO 4 , and the aid of NaNO 3 makes this process even more effective, thus yielding large monolayers of GO and a large amount of humic-and fulvic-like substances.

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van der Waals Epitaxial Growth of Graphene on Sapphire by Chemical Vapor Deposition without a Metal Catalyst

Cited by 222 publications

References 55 publications

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

The Way towards Ultrafast Growth of Single‐Crystal Graphene on Copper

Towards the understanding of the graphene oxide structure: How to control the formation of humic- and fulvic-like oxidized debris

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