2018
DOI: 10.1016/j.apsusc.2017.11.098
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van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

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Cited by 10 publications
(4 citation statements)
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“…Rotationally commensurate growth in the absence of commensurate lattice parameters has been observed for SnS on graphene and is typical of van der Waals epitaxy. ,,, In previous reports, the existence of preferred rotational angles was attributed to the influence of van der Waals interlayer interactions following nucleation at defects. ,, Our experimental and theoretical findings are consistent with this understanding. Ex situ thermal annealing in vacuum (30 min, > 300 °C) or in situ ozone treatment leads to nucleation in as few as four cycles, whereas no growth is observed on pristine exfoliated MoS 2 for up to 25 cycles of precursor dosing.…”
Section: Resultssupporting
confidence: 89%
See 1 more Smart Citation
“…Rotationally commensurate growth in the absence of commensurate lattice parameters has been observed for SnS on graphene and is typical of van der Waals epitaxy. ,,, In previous reports, the existence of preferred rotational angles was attributed to the influence of van der Waals interlayer interactions following nucleation at defects. ,, Our experimental and theoretical findings are consistent with this understanding. Ex situ thermal annealing in vacuum (30 min, > 300 °C) or in situ ozone treatment leads to nucleation in as few as four cycles, whereas no growth is observed on pristine exfoliated MoS 2 for up to 25 cycles of precursor dosing.…”
Section: Resultssupporting
confidence: 89%
“…18 Additionally, a recent report has shown that few-layer SnS buckles with a periodicity of 2−8 nm to reduce the energy associated with the in-plane ferroelectric polarization. 30 Rotationally commensurate growth in the absence of commensurate lattice parameters has been observed for SnS on graphene 34 and is typical of van der Waals epitaxy. [17][18][19]32,35,36 In previous reports, the existence of preferred rotational angles was attributed to the influence of van der Waals interlayer interactions following nucleation at defects.…”
Section: ■ Results and Discussionmentioning
confidence: 96%
“…On reactive supports (e.g., transition metals or oxides), SnS and related materials grow in the form of multilayer nanoflakes that couple to the substrate edge-on at random tilt angles. Basal-plane oriented growth can be achieved by suppressing covalent edge bonding of initial nuclei to the substrate surface, e.g., by growth on van der Waals (vdW) supports. Previous work showed the growth of basal-plane oriented SnS (or SnSe) on different substrates, including SiO 2 , NaCl, mica, and graphene , van der Waals supports. In growth from SnO 2 and S powders on SiO 2 , the crystal phase could be tuned between SnS 2 and SnS by varying the substrate temperature .…”
Section: Introductionmentioning
confidence: 99%
“…In general, SnS epitaxial films have been grown using several methods, such as vacuum evaporation, 19) molecular beam epitaxy, [20][21][22][23][24] vapor transport deposition, 25) pulsed laser deposition, 18) and thermal evaporation. 26) In addition, nanodisks have been grown using electrochemical deposition. 27) Moreover, SnS is also a promising candidate for miniaturization in several applications such as memories and sensors owing to the ferroelectricity originating from its anisotropic layered crystal structure.…”
Section: Introductionmentioning
confidence: 99%