Van der Waals oxide heteroepitaxy

Chu, Ying‐Hao

doi:10.1038/s41535-017-0069-9

Cited by 145 publications

(95 citation statements)

References 46 publications

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“…In addition, the strain in films with different orientations is different, following the trend of σ (111) > σ (110) > σ (001) , which also contributes to the larger ME coupling in (001) nanocomposite films. Recently, flexible substrates have been used to grow functional oxide thin films via Van der Waals epitaxy or transfer . Chu and co‐workers reported the growth of BFO:CFO VANs on a flexible muscovite via van der Waals epitaxy .…”

Section: Functionality Tuning Driven By Strain Defect and Interfacementioning

confidence: 99%

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

et al. 2018

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Complex metal oxides, which show a variety of functional properties such as ferromagnetism, ferroelectricity, multi-ferroelectricity, superconductivity, and ionic conduction, have attracted much attention in the past decades. These exotic physical properties arise from a complex hierarchy of competing interactions among spin, charge, orbital, and lattice degrees of freedom. The development of advanced characterization techniques such as electron microscopy, neutron scattering, synchrotron scattering and imaging, spectroscopy at high magnetic fields, and others has enabled us to study the interactions among these degrees of freedom coupled with strain, defect, and interface Vertically aligned nanocomposite thin films with ordered two phases, grown epitaxially on substrates, have attracted tremendous interest in the past decade. These unique nanostructured composite thin films with large vertical interfacial area, controllable vertical lattice strain, and defects provide an intriguing playground, allowing for the manipulation of a variety of functional properties of the materials via the interplay among strain, defect, and interface. This field has evolved from basic growth and characterization to functionality tuning as well as potential applications in energy conversion and information technology. Here, the remarkable progress achieved in vertically aligned nanocomposite thin films from a perspective of tuning functionalities through control of strain, defect, and interface is summarized. Thin FilmsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201803241. 12 11 12where c 11 and c 12 are elastic moduli of the film material. Epitaxial strain gradually changes with film thickness in perovskite manganites. Figure 3 shows reciprocal space mapping or RSM (103) of La 0.7 Ca 0.3 MnO 3 (LCMO) films on STO (001) substrates. It captures the gradual strain relaxation process with increasing film thickness in manganite thin films. When the film is very thin, the interface is coherent with

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Section: Functionality Tuning Driven By Strain Defect and Interfacementioning

confidence: 99%

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

et al. 2018

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“…Although metal foils with a thickness of micrometers also seem a selection to bear high temperature, the low chemical stability and the difficulty to be polished to micrometers are still big challenges . Therefore, mica has been widely used as substrate for directly grown functional thin films, especially oxide films that need high growth temperature. For flexible oxide/mica heterostructure, various efforts have been devoted to study their electrical transport, magnetotransport, piezoelectric, and magnetoresistance properties or develop flexible resistive memory, flexible transparent heater, and transparent flexible electrodes .…”

Section: Introductionmentioning

confidence: 99%

A Flexible Strain Sensor of Ba(Ti, Nb)O₃/Mica with a Broad Working Temperature Range

Yang

Guo

Gao

et al. 2019

Adv Materials Technologies

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robots, [3] and biomedical devices, [4] flexible electronic devices have attracted much attention. Some flexible electronic devices can be embedded into clothing or gloves, or be mounted on body, to provide a wearable, functional, and sentient electronic system.Flexible strain sensor is one of the representative flexible electronic devices, which works by using electrical sensors built on flexible substrate with various operation modes of piezoresistive, [2] capacitive, [5] and piezoelectric type. [6] Most efforts of research and development have been focused on exploring new materials [7,8] or developing novel structures [9] to detect strain, temperature, or bimodal signal. The reliability of flexible strain sensor in harsh environments such as at ultralow or high temperatures, however, has so far received few attentions. Traditional bendable or stretchable substrate, such as polyethylene terephthalate (PET), polyimide (PI), polydimethylsiloxane (PDMS), paper, silk, and cotton cannot withstand high temperatures. As a result, there has been few thermally stable flexible strain sensors that can survive at temperatures above 200 °C. Consequently, the application of flexible strain sensors is limited in harsh conditions such as in interstellar probe, polar exploration, and petrochemical, where strain sensing at a high or low temperature is required. Flexible strain sensors have captured a lot of attention since first beingproposed. Most studies are focused on adopting new materials or developing novel structures to detect strain, temperature, and even to realize multifunction. The reliability of flexible strain sensors in harsh environments such as at low and high temperatures, however, has so far received little attention because traditional bendable or stretchable substrates, including polyethylene terephthalate, polyimide, polydimethylsiloxane, paper, silk, and cotton, cannot withstand high temperature. The poor thermostability limits their potential applications in harsh conditions such as in interstellar probes, polar exploration, petrochemical, and metal smelting. Here, a heat-resisting flexible strain sensor is shown, consists of a BaNb 0.5 Ti 0.5 O 3 film on top of a 4.5 µm thick mica substrate. The device exhibits excellent thermal stability in a wide temperature range from 20 to 773.15 K. Owing to the ultrathin mica substrate and low resistance, the device demonstrates low power consumption (0.96 µW cm −2 ), is lightweight (2.06 g cm −3 ), together with having high stability over 5000 bending cycles. This work opens a path for pressure sensors applying ceramic materials that can be used from an ultralow to a high temperature.

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“…Key to our design is a thin layer of inorganic mica substrate, ensuring that the FeFET can be processed at high temperature, and is highly flexible yet robust, as demonstrated by the photo of an actual device in the inset of Figure a. In order to facilitate van der Waals epitaxy on top of mica, a thin buffer layer of CoFe 2 O 4 (CFO) was grown first by pulsed laser deposition, after which SrRuO 3 (SRO) gate electrode was grown, followed by the deposition of PZT and ZnO. Since the strong polar state of ferroelectric PZT can be electrically poled by the gate voltage with low coercivity, the accumulation and depletion of charge carriers in the semiconducting ZnO channel between the Pt source and drain can be controlled accordingly, enabling FeFETs with low‐power consumption.…”

Section: Resultsmentioning

confidence: 99%

Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption

Ren

Zhong

Xiao

et al. 2019

Adv Funct Materials

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Flexible ferroelectric field effect transistors (FeFETs) with multiple functionalities and tunable properties are attractive for low power sensing, nonvolatile data storage, as well as emerging memristor applications such as artificial synapses, though the state-of-art flexible FeFETs based on organic materials possess low polarization, large coercivity, and high operating voltage, and suffer from poor thermal stability. Here, developed is an all-inorganic flexible FeFET based on epitaxial Pb(Zr 0.1 Ti 0.9 )O 3 /ZnO heterostructure on a mica substrate, which not only operates under a small voltage (±6 V) and thus consumes low power with an excellent on/off ratio of 10 4 as well as retention characteristics, but also shows robust FeFET performance under large bending deformation (4 mm), extended bending cycling (500 cycles), and high temperature operation at 200 °C. Importantly, the FeFET characteristics depend on temperature, but not on temperature history, critical for operation under repeated thermal loading. The excellent mechanical flexibility and functional robustness of the flexible FeFET originate from the unique van der Waals bonded layer structure of mica, facilitating a small bending radius yet modest strain. This work demonstrates the great promise of mica as a universal platform to integrate complicated functional devices for flexible electronics, especially under harsh environment.

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Van der Waals oxide heteroepitaxy

Cited by 145 publications

References 46 publications

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

A Flexible Strain Sensor of Ba(Ti, Nb)O₃/Mica with a Broad Working Temperature Range

Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption

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Van der Waals oxide heteroepitaxy

Cited by 145 publications

References 46 publications

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

A Flexible Strain Sensor of Ba(Ti, Nb)O3/Mica with a Broad Working Temperature Range

Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption

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A Flexible Strain Sensor of Ba(Ti, Nb)O₃/Mica with a Broad Working Temperature Range