Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth

Wu, Haidi; Ning, Jing; Jia, Yanqing; Yan, Chaochao; Zeng, Yu‐Jia; Guo, Haibin; Zhao, Jiang‐Lin; Wang, Yanbo; Zhang, Jincheng; Wang, Dong

doi:10.1021/acs.cgd.1c00728

Cited by 5 publications

(3 citation statements)

References 39 publications

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“…GaN layers grown on foreign substrates, such as sapphire, contain a high threading dislocation density (TDDs) ranging from 10 8 to 10 9 cm –2 . Screw and mixed type dislocations having a screw component of Burgers vector b = [0001] can promote the formation of growth spirals at the dislocation sites. , As a result, when the GaN substrate misorientation angle is close to 0° from the (0001) plane, hillocks of six-fold symmetry are observed.…”

Section: Introductionmentioning

confidence: 99%

Nanostars in Highly Si-Doped GaN

Sawicka

Turski

Sobczak

et al. 2023

Crystal Growth & Design

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Understanding the relation between surface morphology during epitaxy of GaN:Si and its electrical properties is important from both the fundamental and application perspectives. This work evidences the formation of nanostars in highly doped GaN:Si layers with doping level ranging from 5 × 1019 to 1 × 1020 cm–3 grown by plasma-assisted molecular beam epitaxy (PAMBE). Nanostars are 50-nm-wide platelets arranged in six-fold symmetry around the [0001] axis and have different electrical properties from the surrounding layer. Nanostars are formed in highly doped GaN:Si layers due to the enhanced growth rate along the a-direction ⟨112̅0⟩. Then, the hexagonal-shaped growth spirals, typically observed in GaN grown on GaN/sapphire templates, develop distinct arms that extend in the a-direction ⟨112̅0⟩. The nanostar surface morphology is reflected in the inhomogeneity of electrical properties at the nanoscale as evidenced in this work. Complementary techniques such as electrochemical etching (ECE), atomic force microscopy (AFM), and scanning spreading resistance microscopy (SSRM) are used to link the morphology and conductivity variations across the surface. Additionally, transmission electron microscopy (TEM) studies with high spatial resolution composition mapping by energy-dispersive X-ray spectroscopy (EDX) confirmed about 10% lower incorporation of Si in the hillock arms than in the layer. However, the lower Si content in the nanostars cannot solely be responsible for the fact that they are not etched in ECE. The compensation mechanism in the nanostars observed in GaN:Si is discussed to be an additional contribution to the local decrease in conductivity at the nanoscale.

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Section: Introductionmentioning

confidence: 99%

Nanostars in Highly Si-Doped GaN

Sawicka

Turski

Sobczak

et al. 2023

Crystal Growth & Design

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“…Several procedures have been presented using different synthesis methods in GaN production, aiming for the reduction of crystalline mismatch between the material and substrate. − On the one hand, Amano et al reported the use of an AlN film as a buffer layer for obtaining high-quality GaN films. Furthermore, the obtention of crystalline GaN was successfully accomplished by the two-step growth method, by depositing a low-temperature GaN film as a buffer layer to support the growth of the main film .…”

Section: Introductionmentioning

confidence: 99%

Role of Gold Nanoparticles in Gallium Nitride Growth for Potential Plasmonic Device Applications

Valenzuela-Hernandez,

Rangel,

García

et al. 2023

ACS Appl. Electron. Mater.

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In this report, the results of gallium nitride (GaN) crystal growth on a silicon substrate covered by gold nanoparticles (AuNPs) are described using the chemical vapor deposition (CVD) technique. The formation of AuNPs by solid-state dewetting and a preferential crystallization of GaN species on the gold nucleation centers were demonstrated. The migration and embedding of gold centers during the ripening of GaN structures were evidenced by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Embedded AuNPs endowed the structural and optical properties of a semiconductor, related to the particle size, GaN crystallite, and plasmon–exciton interactions. Photoluminescence (PL) and UV–vis spectroscopy revealed a reduction in the intensity of the near band emission (NBE) at 3.4 eV in the gold-nucleated film in addition to a broadening of the absorption band edge. An increase in the density current of 0.046–0.142 mA/cm2 in a gold-nucleated GaN-based p–n junction was obtained, attributed to the localized surface plasmon resonance (LSPR) effects of the embedded AuNPs. Beyond the advantages of applying group III nitrides in the electronic field, appropriate modification of the preparation method of these materials with metallic covered substrates could provide them with specific properties, according to a targeted application.

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“…And the related research about the manufacturing of DUV-LED based on graphene is still not much. Additionally, the addition of sputtered AlN nucleation layer to assist the growth of the AlN epitaxial layer on the sapphire substrate has been proposed, and the research results show that the sputtered AlN layer can effectively improve the quality of the AlN epitaxial layer [36][37][38][39][40][41][42][43].…”

Section: Introductionmentioning

confidence: 99%

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED

Ning

Zhang

et al. 2023

Nanotechnology

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The advantages of van der Waals epitaxial nitrides have become a research hot topic. It is worth noting that graphene plays an important role in the research of epitaxial AlN epitaxial layer. In this work, we demonstrate a method to obtain high-quality and low-dislocation AlN epitaxial layer by combining graphene and sputtered AlN as the nucleation layer on the C-sapphire substrate via metal organic chemical vapor deposition (MOCVD), and successfully fabricated a 277 nm AlGaN-based deep ultraviolet light emitting diode (DUV-LED) based on the obtained AlN epitaxial layer. The presence of graphene promotes the stress release of AlN. Compared with the AlN epitaxial layer directly grown on graphene/sapphire substrate, the exist of sputtered AlN/graphene nucleation layer facilitates most of the threading dislocations in AlN can annihilate each other in the range of about 100 nm. Thus, as grown AlN epitaxial layer shows the decreasing of the screw dislocation from 2.31 × 109 to 2.08 × 108 cm-2 significantly. We manufacture an DUV-LED with 277nm emission wavelength by using high-quality AlN films, which shows that magnitude of the leakage current is only on the order of nanoamperes and the forward turn on voltage is 3.5 V at room temperature. This study provides a meaningful strategy to achieve high-quality AlN film and high-performance DUV-LED.

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Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth

Cited by 5 publications

References 39 publications

Nanostars in Highly Si-Doped GaN

Nanostars in Highly Si-Doped GaN

Role of Gold Nanoparticles in Gallium Nitride Growth for Potential Plasmonic Device Applications

High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED

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