Van der Waals semiconductor based self-powered transparent broadband photodetector

Kumar, Naveen; Kumail, Muhammad; Lee, Junghyun; Park, Hyeongsik; Kim, Sangho

doi:10.1016/j.materresbull.2023.112466

Cited by 1 publication

(1 citation statement)

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“…吸收. 根据Tauc原理 [27] , 即(αhυ) 意的是, 该异质结几乎没有整流特性 [28] , 可以用异生载流子瞬间积累 [29][30][31] ; 当光源突然关闭时, 光生载流子并不会立即消失, 而是有一个缓慢的重新复合过程, 这导致在短时间内器件的电导率不会迅速恢复至施加光照前的初始状态 [32,33] 是由器件内部光生载流子饱和引起的 [38] , EQE值随着光强的增加而趋于降低, 可以通过光生电子空穴对增量比例的下降来理解, 增加光强度可以改善光生载流子的分离和传输过程, 从而显著增强PDCR [39] , 在254 nm光照下, PDCR从1. 子亲和度的差来表示, 根据以往文献报道 [46] , 氧化镓和硒化镓的电子亲和势分别为4.2和3.…”

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GaSe/β-Ga2O3 heterojunction based self-powered solar-blind ultraviolet photoelectric detector

Su,

Xi,

et al. 2024

Acta Phys. Sin.

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UV photodetectors have the advantages of high sensitivity and fast response speed. As an ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) plays an extremely important role in the field of deep ultraviolet detection. It can form a typical type II heterostructure with GaSe, which promotes carrier separation and transport. In this paper, Ga2O3 epitaxial films were grown on sapphire substrates by plasma-assisted chemical vapor deposition (PECVD). GaSe films and GaSe/β-Ga2O3 heterojunction photodetectors were grown on gallium oxide films by Bridgeman technology. The detector has a good response to deep ultraviolet light, the dark current of the device is only 1.83 pA at 8 V, and the photocurrent reaches 6.5 nA at 254 nm. the UVC/Visible (254 nm/600 nm) has a high rejection ratio of about 354. Although at very small light intensities, the responsivity and detection reach 1.49 mA/W and 6.65× 1011 Jones. At the same time, due to the photovoltaic effect formed by the space charge region at the junction interface, the detector exhibits self-power supply performance at zero bias voltage, and the open-circuit voltage is 0.2 V. In addition, the detector has a very good sensitivity, whether it is irradiated with different light intensities under the condition of constant voltage, or changing the voltage under the condition of constant light intensity, the device can respond quickly. It can respond within milliseconds under a bias voltage of 10V. This paper demonstrates the enormous potential of heterojunctions in photoelectric detection by analyzing the photophysical and interface physical issues involved in heterojunction photodectectors, and provides a possibility for the deep ultraviolet detection of gallium oxide.

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GaSe/β-Ga2O3 heterojunction based self-powered solar-blind ultraviolet photoelectric detector

Su,

Xi,

et al. 2024

Acta Phys. Sin.

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Van der Waals semiconductor based self-powered transparent broadband photodetector

Cited by 1 publication

References 54 publications

GaSe/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> heterojunction based self-powered solar-blind ultraviolet photoelectric detector

GaSe/<i>β</i>-Ga<sub>2</sub>O<sub>3</sub> heterojunction based self-powered solar-blind ultraviolet photoelectric detector

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