Vanadium-base alloys for fusion first-wall/blanket applications

Smith, D.L.; Billone, M.C.; Natesan, K.

doi:10.1016/s0263-4368(00)00037-8

Cited by 91 publications

(36 citation statements)

References 55 publications

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“…1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 3 Vanadium-based alloys currently constitute advanced candidate materials for the first wall of future fusion reactors such as DEMO [1,2]. In particular, V-4Cr-4Ti alloy offers an outstanding combination of high-temperature strength and radiation resistance [3][4][5], coupled with low neutron activation [6,7] and corrosion resistance to liquid metal coolants [8][9][10].…”

Section: ) Direct Comparison With the Results Of Neutron-irradiatiomentioning

confidence: 99%

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Monolayer-thick TiO precipitation in V-4Cr-4Ti alloy induced by proton irradiation

et al. 2017

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We have characterised to atomic resolution the mono-layer thick TiO-type precipitate induced by proton irradiation in V-4Cr-4Ti alloy at the coarsening radiation-induced interstitial a/2⟨111⟩ dislocation loops expected to exert a minimal effect on the precipitate formation. This monolayer-thick precipitate constitutes an early stage in the radiationinduced aging process of V-4Cr-4Ti at low temperatures, and can potentially absorb additional light elements in reactor environments. 1Moor Row, November 24, 2016 Dear Prof. Beyerlein, Please find attached the resubmitted manuscript SMM-16-1716 entitled 'Monolayer-thick TiO precipitation in V-4Cr-4Ti alloy induced by proton irradiation' which has been significantly revised on the basis of the comments received by the reviewers.The detailed response to the reviewers' comments, together with the revised version of the manuscript, is attached. We would like to thank the reviewers for their time and effort in appraising the manuscript. The comments received were pertinent and helpful in improving the manuscript. All the points raised have been addressed and the manuscript has been amended accordingly. We believe that the revisions made adequately address the points raised and should therefore present no further obstacle to publication. We thank the reviewers for carefully reading the manuscript and the useful comments. We have addressed all those comments, which we feel have improved the article's quality.Detailed response:1.) In figure 2, images for SA and SACW irradiated at 350C are necessary for better understanding of temperature effects. We have included additional text in the manuscript about the temperature effect. The novelty and impact of this work lies in the recovery of the CWed structure already at 300°C (Fig. 2) before the formation of monolayer-thick RIPs at 350°C (Fig. 3). 2.) What is the relationship between the observed microstructure and the hardness? For example, for SA irradiated at 300C and 350C, where does the difference in hardening come?We have added some text to clarify the observed hardening behaviour at different temperatures in terms of the observed microstructure. 3.) As the observed RIPs in this study is platelet, the description as "average size" may mislead.We have changed the average size of the monolayer-thick RIPs by their average length. 4.) The description about recovery of the pre-existing dislocation network in SACW is contradicting in page 6 and page 7.We have clarified the contradiction in page 6 and 7. 5.) Direct comparison with the results of neutron-irradiation might be difficult since the damage rate is exceedingly large.We have added some text about the difference in dose rate and particle fluence between neutron and proton irradiation. The formation and evolution of a/2 ⟨111⟩ unfaulted dislocation loops in our proton irradiated samples correspond to the observations reported in neutron-irradiated material. However the average loop size at 350C in the proton irradiated samples (85nm) is lower than the value repo...

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Section: ) Direct Comparison With the Results Of Neutron-irradiatiomentioning

confidence: 99%

“…In particular, V-4Cr-4Ti alloy offers an outstanding combination of high-temperature strength and radiation resistance [3][4][5], coupled with low neutron activation [6,7] and corrosion resistance to liquid metal coolants [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Monolayer-thick TiO precipitation in V-4Cr-4Ti alloy induced by proton irradiation

et al. 2017

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“…7,8) Furthermore, Si 3 N 4 exhibits high resistance against radiation damage with low radio-activation characteristics of the constituent elements. 3,7,9) However, it is still difficult to obtain sound joints of Si 3 N 4 and metallic materials, which endure the high temperatures at which Si 3 N 4 exhibits its merits.…”

Section: à3mentioning

confidence: 99%

“…[1][2][3][4] They exhibit low radio-activation characteristics retaining high strength and fracture toughness at high working-temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Solid State Diffusion Bonding of Silicon Nitride Using Vanadium Foils

et al. 2003

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This paper describes the relation between the interfacial microstructure and the fracture strength of the joints of silicon nitride (Si 3 N 4 ) and vanadium (V) formed by solid state diffusion bonding. At first, the interfacial microstructure and its evolution process were analyzed in detail. The phase sequence at the interface changes with the bonding time showing five typical stages. In the first stage, a V 3 Si layer and V 2 N grains are formed. The V 2 N grains contact with the V 3 Si layer at 1473 K and below, while the contact is prohibited at 1498 K and above. The Si 3 N 4 /V 3 Si interface is metastable. In the second stage, a V 5 Si 3 N 1ÀX layer appears. In the third stage, V is annihilated. In the fourth stage, the V 3 Si layer is annihilated and VN grains are formed. In the fifth stage, V 2 N is annihilated. This evolution process of the interfacial microstructure agrees well with the proposed chemical potential diagram, except the metastable state of the interface. The increase and decrease behavior in the thickness of each reaction product interact with each other. The behavior of the V 3 Si layer is affected not only by the formation and growth of the V 5 Si 3 N 1ÀX layer but also by the formation of a V(Si) zone at the V 3 Si/V interface. The formation of the V 5 Si 3 N 1ÀX layer starts when the spatial gradient of the chemical potential of vanadium in the V 3 Si layer decreases to a certain value. The fracture strength of the joints changes depending on the bonding temperature and time. The higher bonding temperature leads to the higher maximum fracture strength. The maximum strength at each bonding temperature is achieved when the thickness of the V 3 Si layer is 2.0 mm. The prolonged bonding time gradually reduces the fracture strength down to 42 MPa.

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