Vapor Deposition of Bilayer 3R MoS₂ with Room‐Temperature Ferroelectricity

Abstract

Two‐dimensional ultrathin ferroelectrics have attracted much interest due to their potential application in high‐density integration of non‐volatile memory devices. Recently, two‐dimensional van der Waals ferroelectric based on interlayer translation has been reported in twisted bilayer h‐BN and TMDs. However, sliding ferroelectricity has not well been studied in non‐twisted homo‐bilayer TMD grown directly by CVD. In this paper, for the first time, we reported experimental observation of a room‐temperature out‐of‐plane ferroelectric switch in semiconducting bilayer 3R MoS2 synthesized by reverse‐flow CVD. PFM hysteretic loops and first principle calculations demonstrate that the ferroelectric nature and polarization switching processes are based on interlayer sliding. The vertical Au/3R MoS2/Pt device exhibits a switchable diode effect. Polarization modulated Schottky barrier height and polarization coupling of interfacial deep states trapping/detrapping might serve in coordination to determine switchable diode effect.The room‐temperature ferroelectricity of CVD‐grown MoS2 will proceed with the potential wafer‐scale integration of 2D TMDs in the logic circuit.This article is protected by copyright. All rights reserved