Vapor growth of HgI2 by periodic source or crystal temperature oscillation

Schieber, M.; Schnepple, W.F.; Berg, L. van den

doi:10.1016/0022-0248(76)90087-7

Cited by 141 publications

(13 citation statements)

References 11 publications

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“…A commercial Yissum detector was fabricated from a HgI2 single crystal grown from the vapor phase in a horizontal furnace (Beinglass, Dishon, Holzer & Schieber, 1977) by the TOM method (Schieber, Schnepple & Van den Berg, 1976). The detector had an active area of 5 × 12 ram, a thickness of about 0"5 mm and FWHM of 1.2 keV at 8 keV of the Cu K~ line.…”

Section: Methodsmentioning

confidence: 99%

Replacement of monochromator and proportional gas counter by mercuric iodide detector in X-ray powder diffraction

Nissenbaum¹,

Levi²,

Bürger³

et al. 1983

J Appl Cryst

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Low-resolution and therefore low-cost mercuric iodide detectors have successfully been applied to replace the combination of a graphite monochromator and a proportional gas radiation counter used in X-ray diffractometers. The mercuric iodide detector requires a lower DC bias of only 200 V rather than the 1500 V bias needed for the proportional gas counter. The much better stopping power of HgI2 allows higher counting efficiency and therefore a better signal-tonoise ratio. Results are shown for X-ray powder diffractions of polycrystalline cubic silicon and tetragonal HgI 2.

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Section: Methodsmentioning

confidence: 99%

Replacement of monochromator and proportional gas counter by mercuric iodide detector in X-ray powder diffraction

Nissenbaum¹,

Levi²,

Bürger³

et al. 1983

J Appl Cryst

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“…The temperature oscillating method (TOM), which is a modification to the temperature gradient reversal method, besides oscillating the temperature gradient by varying T S between a minimum and a maximum values (a procedure called periodic oscillating source temperature or POST), also employ temperature gradient oscillation by varying T C (periodic oscillating crystal temperature or POCT) [24]. POCT is preferred during the nucleation stage, because the effect of changing T C is more easily observed at shorter ∆τ g or ∆τ e , while POST is preferred during the growth stage, because the growing crystal is held at a constant temperature.…”

Section: Vapor Growth Of Hgi 2 In the Vertical Furnacementioning

confidence: 99%

“…As the growth progresses, morphological stability may become an issue and an overgrowth (a defect) on the crystal surface can happen [40]. Although growth striations caused by temperature swings in the temperature gradient reversal method have been avoided, nevertheless, striations caused by thermal instability are still encountered [24].…”

Section: Vapor Growth Of Hgi 2 In the Vertical Furnacementioning

confidence: 99%

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Vapor Growth of Mercuric Iodide Tetragonal Prismatic Crystals

Ariesanti¹

2013

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information pound-force/inch 2 (psi) pound-mass (lbm avoirdupois) pound-mass-foot 2 (moment of inertia) pound-mass/foot 3 rad (radiation dose absorbed) roentgen shake slug torr (mm Hg, 0 0 C) *The bacquerel (Bq) is the SI unit of radioactivity; 1 Bq = 1 event/s. **The Gray (GY) is the SI unit of absorbed radiation.1.000 000 x E -10 1.013 25 x E +2 1.000 000 x E +2 1.000 000 x E -28 1.054 350 x E +3 4.184 000 4.184 000 x E -2 3.700 000 x E +1 1.745 329 x E -2 t k = (t o f + 459.67)/1.8 1.602 19 x E -19 1.000 000 x E -7 1.000 000 x E -7 3.048 000 x E -1 1.355 818 3.785 412 x E -3 2.540 000 x E -2 1.000 000 x E +9 1.000 000 4.183 4.448 222 x E +3 6.894 757 x E +3 1.000 000 x E +2 1.000 000 x E -6 2.540 000 x E -5 1.609 344 x E +3 2.834 952 x E -2 4.448 222 1.129 848 x E -1 1.751 268 x E +2 4.788 026 x E -2 6.894 757 4.535 924 x E -1 4.214 011 x E -2 1.601 846 x E +1 1.000 000 x E -2 2.579 760 x E -4 1.000 000 x E -8 1.459 390 x E +1 1.

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“…From this point, crystal quality deteriorates, although it remains comparable t o STP grown samples. LTVTP procedures have been previously reported by the authors for growing a number of crystals of the I-111-VI, group semiconductors (PAORICI et al, 1978;1979;1980a) and recently by BINSMA as applied to CuInS, and CuGaS,.…”

Section: Introductionmentioning

confidence: 98%

Time‐varying Temperature Profile CVD Methods for Growing CuInS₂ and CdIn₂S₄ Crystals

Paorici¹,

Zanotti²,

Curti³

1982

Cryst. Res. Technol.

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A time-varying temperature profile method is reported for growing crystals in horizontal closed-tube arrangements by vapour phase iodine transport. After an initial stage, during which the temperature is linearly raised with time in the source region of the container, in such a way as to control the primary nucleation (a limited number of seed crystals can thus be produced), a second stage follows during which the source temperature is allowcd t o oscillate in order to favour the secondary nucleation (only the first grown seed crystals are then allowed to grow). A proper choice of the frequency and amplitude of the temperature cycle is shown to control the growth up t o the obtainement of solitary crystals per run of CuInS, and CdIn,S,. The role of the sIow growing faces in favouring good performances of the method is emphasized.

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Vapor growth of HgI2 by periodic source or crystal temperature oscillation

Cited by 141 publications

References 11 publications

Replacement of monochromator and proportional gas counter by mercuric iodide detector in X-ray powder diffraction

Replacement of monochromator and proportional gas counter by mercuric iodide detector in X-ray powder diffraction

Vapor Growth of Mercuric Iodide Tetragonal Prismatic Crystals

Time‐varying Temperature Profile CVD Methods for Growing CuInS₂ and CdIn₂S₄ Crystals

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Vapor growth of HgI2 by periodic source or crystal temperature oscillation

Cited by 141 publications

References 11 publications

Replacement of monochromator and proportional gas counter by mercuric iodide detector in X-ray powder diffraction

Replacement of monochromator and proportional gas counter by mercuric iodide detector in X-ray powder diffraction

Vapor Growth of Mercuric Iodide Tetragonal Prismatic Crystals

Time‐varying Temperature Profile CVD Methods for Growing CuInS2 and CdIn2S4 Crystals

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Time‐varying Temperature Profile CVD Methods for Growing CuInS₂ and CdIn₂S₄ Crystals