Free-standing and
flexible field-effect transistors based on 6,13-bis(triisopropylsilylethynyl)-pentacene
(TIPS-pentacene)/polystyrene bilayers are obtained by well-controlled
phase separation of both components. The phase separation is induced
by solvent vapor annealing of initially amorphous blend films, leading
to crystallization of TIPS-pentacene as the top layer. The crystallinity
and blend morphology strongly depend on the molecular weight of polystyrene,
and under optimized conditions, distinct phase separation with a well-defined
and trap-free interface between both fractions is achieved. Due to
the distinct bilayer morphology, the resulting flexible field-effect
transistors reveal similar charge carrier mobilities as rigid devices
and additionally pronounced environmental and bias stress stabilities.
The performance of the flexible transistors remains stable up to a
strain of 1.8%, while above this deformation, a close relation between
current and strain is observed that is required for applications in
strain sensors.