Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Abstract

Multilayer hexagonal boron nitride (h-BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h-BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor-liquid-solid growth (VLSG) method to achieve uniform multilayer h-BN by using a molten Fe 82 B 18 alloy and N 2 as reactants. Liquid Fe 82 B 18 not only supplies boron but also continuously dissociates nitrogen atoms from the N 2 vapor to support direct h-BN growth on a sapphire substrate; therefore, the VLSG method delivers high-quality h-BN multilayers with a controllable thickness. Further investigation of the phase evolution of the Fe-B-N system reveals that isothermal segregation dominates the growth of the h-BN. The approach herein demonstrates the feasibility for large-area fabrication of van der Waals 2D materials and heterostructures.

Direct growth of hexagonal boron nitride on non-metallic substrates and its heterostructures with graphene

“…The mGr (grown on TiO 2-x ) exhibited improved mechanical and electrical performance and had a domain size larger than 260 μm. use of vapor-liquid-solid growth (VLSG) approach to grow fairly high crystalline h-BN using molten Fe 82 B 18 and N 2 as precursors and with temperatures of ∼1250°C as reported in ( Shi et al., 2020 ). The use of molten Fe 82 B 18 enabled the uniform isothermal segregation growth of the multilayer h-BN.…”

Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides

“…For example, Shi et al . have used a molten Fe 82 B 18 alloy which supplies boron source and dissociates nitrogen in the carrier gas for the growth of multilayer boron nitride [ 24 ]. Li et al .…”

Ultrathin High Quality‐Factor Planar Absorbers/Emitters Based on Uniaxial/Biaxial Anisotropic van der Waals Polar Crystals

“…Last, these planar devices can be optimized by synthesizing the uniform and large-area hBN/α-MoO 3 thin films via vapor-liquidsolid growth method, chemical vapor deposition and physical vapor deposition. [59,60] Ultimately, the inherited birefringence of α-MoO 3 can provide a possible method to control the polarization of emission with a simple planar configuration without nanopatterning on the surface. [61][62][63][64][65][66][67][68]…”