Vapor Phase Epitaxial Growth of MgO · Al2 O 3

Ihara, Masaru; Arimoto, Yoshihiro; Jifuku, M.; Kimura, Takafumi; Kodama, Shigeo; Yamawaki, H.; Yamaoka, Toyoshi

doi:10.1149/1.2123611

Cited by 75 publications

(16 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…38,39 Furthermore, it was concluded from first principles calculations by Mees et al 25 that the bandgap remains unchanged by doping with Al and Li. Undoped MgAl 2 O 4 has a bandgap of 7.8 eV and therefore a very low electronic conductivity.…”

Section: Electrical and Electrochemical Characterizationmentioning

confidence: 99%

See 1 more Smart Citation

Characterization of thin films of the solid electrolyte Li_xMg_1−2xAl_2+xO₄ (x = 0, 0.05, 0.15, 0.25)

Put

Vereecken

Mees

et al. 2015

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

RF-sputtered thin films of spinel Li(x)Mg(1-2x)Al(2+x)O4 were investigated for use as solid electrolyte. The usage of this material can enable the fabrication of a lattice matched battery stack, which is predicted to lead to superior battery performance. Spinel Li(x)Mg(1-2x)Al(2+x)O4 thin films, with stoichiometry (x) ranging between 0 and 0.25, were formed after a crystallization anneal as shown by X-ray diffraction and transmission electron microscopy. The stoichiometry of the films was evaluated by elastic recoil detection and Rutherford backscattering and found to be slightly aluminum rich. The excellent electronic insulation properties were confirmed by both current-voltage measurements as well as by copper plating tests. The electrochemical stability window of the material was probed using cyclic voltammetry. Lithium plating and stripping was observed together with the formation of a Li-Pt alloy, indicating that Li-ions passed through the film. This observation contradicted with impedance measurements at open circuit potential, which showed no apparent Li-ion conductivity of the film. Impedance spectroscopy as a function of potential showed the occurrence of Li-ion intercalation into the Li(x)Mg(1-2x)Al(2+x)O4 layers. When incorporating Li-ions in the material the ionic conductivity can be increased by 3 orders of magnitude. Therefore it is anticipated that the response of Li(x)Mg(1-2x)Al(2+x)O4 is more adequate for a buffer layer than as the solid electrolyte.

show abstract

Section: Electrical and Electrochemical Characterizationmentioning

confidence: 99%

“…Undoped MgAl 2 O 4 has a bandgap of 7.8 eV and therefore a very low electronic conductivity. 38,39 Furthermore, it was concluded from first principles calculations by Mees et al 25 that the bandgap remains unchanged by doping with Al and Li.…”

Section: Electrical and Electrochemical Characterizationmentioning

confidence: 99%

Characterization of thin films of the solid electrolyte Li_xMg_1−2xAl_2+xO₄ (x = 0, 0.05, 0.15, 0.25)

Put

Vereecken

Mees

et al. 2015

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

show abstract

“…show better lattice match with silicon. Epitaxial growth of MgAl 2 O 4 on Si has been demonstrated using MOCVD, suggesting its integrability with silicon [56]. However, the performance-limiting factor is the strong absorption of these materials caused by the intra-atomic electric dipole transition, intervalence charge transfer (IVCT) and intersublattice charge transfer (ISCT) mechanisms [57].…”

Section: Progress On Monolithic Integration Of Magneto-optical Oximentioning

confidence: 99%

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

Jiang

et al. 2013

Materials

View full text Add to dashboard Cite

Achieving monolithic integration of nonreciprocal photonic devices on semiconductor substrates has been long sought by the photonics research society. One way to achieve this goal is to deposit high quality magneto-optical oxide thin films on a semiconductor substrate. In this paper, we review our recent research activity on magneto-optical oxide thin films toward the goal of monolithic integration of nonreciprocal photonic devices on silicon. We demonstrate high Faraday rotation at telecommunication wavelengths in several novel magnetooptical oxide thin films including Co substituted CeO2−δ, Co- or Fe-substituted SrTiO3−δ, as well as polycrystalline garnets on silicon. Figures of merit of 3~4 deg/dB and 21 deg/dB are achieved in epitaxial Sr(Ti0.2Ga0.4Fe0.4)O3−δ and polycrystalline (CeY2)Fe5O12 films, respectively. We also demonstrate an optical isolator on silicon, based on a racetrack resonator using polycrystalline (CeY2)Fe5O12/silicon strip-loaded waveguides. Our work demonstrates that physical vapor deposited magneto-optical oxide thin films on silicon can achieve high Faraday rotation, low optical loss and high magneto-optical figure of merit, therefore enabling novel high-performance non-reciprocal photonic devices monolithically integrated on semiconductor substrates.

show abstract

“…One of the first crystalline oxides to be grown epitaxially on silicon was the spinel material, MgAl 2 O 4 (MGA) 17. The original work was directed at depositing a crystalline oxide on silicon as a route to achieving silicon‐on‐insulator (SOI) structures.…”

Section: Growthmentioning

confidence: 99%

Crystalline Oxides on Silicon

et al. 2010

View full text Add to dashboard Cite

This review outlines developments in the growth of crystalline oxides on the ubiquitous silicon semiconductor platform. The overall goal of this endeavor is the integration of multifunctional complex oxides with advanced semiconductor technology. Oxide epitaxy in materials systems achieved through conventional deposition techniques is described first, followed by a description of the science and technology of using atomic layer-by-layer deposition with molecular beam epitaxy (MBE) to systematically construct the oxide-silicon interface. An interdisciplinary approach involving MBE, advanced real-space structural characterization, and first-principles theory has led to a detailed understanding of the process by which the interface between crystalline oxides and silicon forms, the resulting structure of the interface, and the link between structure and functionality. Potential applications in electronics and photonics are also discussed.

show abstract

Vapor Phase Epitaxial Growth of MgO · Al2 O 3

Cited by 75 publications

References 5 publications

Characterization of thin films of the solid electrolyte Li_xMg_1−2xAl_2+xO₄ (x = 0, 0.05, 0.15, 0.25)

Characterization of thin films of the solid electrolyte Li_xMg_1−2xAl_2+xO₄ (x = 0, 0.05, 0.15, 0.25)

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

Crystalline Oxides on Silicon

Contact Info

Product

Resources

About

Vapor Phase Epitaxial Growth of MgO · Al2 O 3

Cited by 75 publications

References 5 publications

Characterization of thin films of the solid electrolyte LixMg1−2xAl2+xO4 (x = 0, 0.05, 0.15, 0.25)

Characterization of thin films of the solid electrolyte LixMg1−2xAl2+xO4 (x = 0, 0.05, 0.15, 0.25)

Magneto-Optical Thin Films for On-Chip Monolithic Integration of Non-Reciprocal Photonic Devices

Crystalline Oxides on Silicon

Contact Info

Product

Resources

About

Characterization of thin films of the solid electrolyte Li_xMg_1−2xAl_2+xO₄ (x = 0, 0.05, 0.15, 0.25)

Characterization of thin films of the solid electrolyte Li_xMg_1−2xAl_2+xO₄ (x = 0, 0.05, 0.15, 0.25)