Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3

Imade, Mamoru; Bu, Yuan; Sumi, Tetsuya; Kitamoto, Akira; Yoshimura, Masashi; Sasaki, T.; Imsemura, Masashi; Mori, Yusuke

doi:10.1016/j.jcrysgro.2011.12.022

Cited by 22 publications

(23 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The reduction reaction occurs more frequently with increasing H 2 pressure. It has also been experimentally found that the O concentration decreases with increasing temperature . It is generally considered that the desorption rate increases with increasing temperature.…”

Section: Resultsmentioning

confidence: 96%

See 1 more Smart Citation

First‐principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions

Kawamura

Kitamoto

Imade

et al. 2017

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

First‐principles calculations are used to investigate the stable structures of the GaN(0001) and (000–1) surfaces under oxide vapor phase epitaxy growth conditions. The surface phase diagrams as a function of temperature and Ga pressure are described. It was found that the GaN(0001) surface is covered by OH groups. For the GaN(000–1) surface, the stable surface structure is with H atoms adsorbed on the topmost N atoms or an O atom stably incorporated into the Ga monolayer. We discuss the relationship between the growth conditions and O impurity incorporation. From the results, we suggest that high H2 pressure and high temperature growth conditions are favorable for decreasing O impurity incorporation.

show abstract

Section: Resultsmentioning

confidence: 96%

“…In addition to the above methods, the oxide vapor phase epitaxy (OVPE) method has also recently attracted interest. In this method, GaN is formed by the reaction of Ga 2 O with NH 3 :

{Ga}_{2} normalO false(normalg false) + {2NH}_{3} false(normalg false) \to 2GaN false(normals false) + {normalH}_{2} normalO false(normalg false) + 2 {normalH}_{2} false(normalg false) normal.

…”

Section: Introductionmentioning

confidence: 99%

First‐principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions

Kawamura

Kitamoto

Imade

et al. 2017

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

show abstract

“…In our recent study, the surface morphology was improved under the high-rate growth condition at higher growth temperature. 23) Nevertheless, the polycrystalline GaN was still observed on the epitaxial layer even when we performed the GaN crystal growth under the highrate growth condition at high temperature, 1250 °C. The OVPE-GaN growth is performed at the temperature, which is approximately 200 °C higher compared with the other methods such as MOVPE and HVPE.…”

mentioning

confidence: 95%

High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H₂O vapor in a high-temperature condition

Shimizu¹,

Tsuno²,

Kamiyama³

et al. 2020

Appl. Phys. Express

Self Cite

View full text Add to dashboard Cite

The oxide vapor phase epitaxy (OVPE) method enables the fabrication of low-resistivity GaN crystals. However, polycrystal formation is detrimental to the growth of thick GaN crystals at the high growth rate by the OVPE method. In this study, we focused on H2O additive under the high-rate and high-temperature growth condition to suppress generation of Ga droplet, the origin of polycrystalline GaN. The polycrystal density dramatically decreased by adding H2O, which can convert Ga droplet into Ga2O vapor. We obtained a 431 μm thick OVPE-GaN layer at 108 μm h−1, which is the highest value in GaN crystals grown by the OVPE method.

show abstract

“…Nevertheless, the OVPE method has an issue with polycrystalline GaN crystals formed on the epitaxially grown layer (epi-layer), [18][19][20] and it is essential to suppress them for growing thick OVPE-GaN layers. In the previous study, we attempted the high-temperature growth at 1250 °C and succeeded in the suppression of the polycrystal formation at about 100 μm h −1 , and fabricated thick OVPE-GaN layers.…”

mentioning

confidence: 99%

High-rate OVPE-GaN crystal growth at a very high temperature of 1300 °C

Shimizu¹,

Usami²,

Kamiyama³

et al. 2022

Appl. Phys. Express

Self Cite

View full text Add to dashboard Cite

Polycrystal formation is an issue to be resolved to grow thick GaN crystals by the oxide vapor phase epitaxy (OVPE) method. Since the high-temperature growth at 1250oC was effective in suppressing the polycrystal formation in our previous study, we attempt further high-temperature OVPE-GaN crystal growth at 1300oC. However, the GaN surface decomposition becomes severe at 1300oC. The pre-growth epitaxy was employed to avoid the surface decomposition and enabled high-temperature growth. Nearly polycrystal-free growth of GaN crystal was achieved, and we obtained a 478-µm-thick OVPE-GaN layer at 1300oC with a further high growth rate of about 200 µm/h.

show abstract

Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3

Cited by 22 publications

References 18 publications

First‐principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions

First‐principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions

High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H₂O vapor in a high-temperature condition

High-rate OVPE-GaN crystal growth at a very high temperature of 1300 °C

Contact Info

Product

Resources

About

Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3

Cited by 22 publications

References 18 publications

First‐principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions

First‐principles study of the surface phase diagrams of GaN(0001) and (000−1) under oxide vapor phase epitaxy growth conditions

High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H2O vapor in a high-temperature condition

High-rate OVPE-GaN crystal growth at a very high temperature of 1300 °C

Contact Info

Product

Resources

About

High-rate OVPE-GaN growth by the suppression of polycrystal formation with additional H₂O vapor in a high-temperature condition