Vapor phase epitaxial materials for LED applications

Craford, M. G.; Groves, W. O.

doi:10.1109/proc.1973.9175

Cited by 98 publications

(4 citation statements)

References 62 publications

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“…(26) to Ruehrwein (27) (and to F. V. Williams, fall, 1960, Syracuse, New York) led to today's most widely used open-tube VPE system (Fig. 2) for the large-scale growth of GaAsl-=P= (x = 0 GaAs, x = 1 GaP) (28)(29)(30)(31). In this process of crystal growth, HC1 is used to transport the column 1II constituents (Ga or In metal), and AsI-~ and PH3 are the source of the As and P for the VPE crystal.…”

Section: Vapor Phase Epitaxy (Vpe)--in 1960 Marinacementioning

confidence: 99%

“…The details of this process for the growth of GaAs, GaP, and GaAs~-xP~ are described elsewhere [Ref. (28)(29)(30)(31)]. It is worth mentioning, however, that since the AsH~-PHa system of VPE crystal growth is the highest volume, most widely used one in the LED industry, it is under constant study in order to effect improvements in crystal quality, freedom from defects, and improved doping.…”

Section: Vapor Phase Epitaxy (Vpe)--in 1960 Marinacementioning

confidence: 99%

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Compound Semiconductors

Holonyak

Stillman

Wolfe

1978

J. Electrochem. Soc.

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The invention of the transistor (1, 2) in late 1947 and its later embodiment in junction form (3) marked the beginning of a profound change in electronics. Not only did the receiving tube basically become obsolete, but many new device functions emerged, and ultimately unbelievable size reductions and enormous packing densities resulted. As is well known, it became possible to build an entire functional system in a single conducting block of material. Also, new forms of power devices, based on the transistor effect, became possible.With the invention of the transistor the study of electrical conduction in solids took on new importance, and similarly the growth and study of semiconductor crystals, at first, Ge (4). Since Ge is a much more tractable material than other elemental semiconductors, it was natural that the transistor began with Ge, and that in turn the transistor (and p-n junctions) motivated the growth and study of single crystal Ge of great purity (4, 5). In fact, Ge and its successor Si, because of the transistor, have been purified to such high. levels and have been grown with such perfection that Si now even serves as the standard for determination of Avogadro's number (6).The original transistor pioneers were quite aware that beyond their initial experimental material (Ge), Si offered a large potential (7). The real emergence of Si as a transistor material probably came in late 1954 and early 1955 when, at Bell Laboratories, Sidiffused-impurity devices were first constructed. Based on his considerable understanding of switching devices and the need for low off-stage leakage current, John Moll above all others urged the development of diffused-impurity Si devices; for this purpose, in his own group Au-Sb and A1 metallization of Si were developed (8), as well as certain forms of transistor devices (9). The most important form of diffused-impurity p-n junctions came from Carl Frosch (and L. Derick) (1O), including oxide masking and with it the teaching to leave the oxide on Si for protection of the device (11). These developments were sufficient for Moll and his colleagues to be able to convince Jack Morton (spring of 1955) to switch transistor development from Ge to Si. The rest is history, and now where Si "can do the job," there is little interest on the part of device researchers to attempt to displace it with another material. No other material has been as extensively developed, nor offers a natural oxide affording so many processing and device advantages.As useful as Ge and, more so, Si have proven to be in semiconductor devices, they possess also certain limitations. Their bandgaps are indirect and are fixed 4 487C 488C

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Section: Vapor Phase Epitaxy (Vpe)--in 1960 Marinacementioning

confidence: 99%

Section: Vapor Phase Epitaxy (Vpe)--in 1960 Marinacementioning

confidence: 99%

Compound Semiconductors

Holonyak

Stillman

Wolfe

1978

J. Electrochem. Soc.

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“…• MOCVD (Metal Organic Chemical Vapor Deposition) [13] • MBE (Molecular Beam Epitaxy) [14,15] • PVD (Physical Vapor Deposition) [16] • Solution-based methods (such as spin-coating or inkjet printing) [17] • HVPE (Hydride Vapor-Phase Epitaxy) [18] • PAMBE (Plasma-Assisted Molecular Beam Epitaxy) [19] • MBE-MOVPE hybrid approach [20] • MOCVD [21,22] • MBE [23] • PVD [16] • HVPE [18] • MBE-MOVPE hybrid approach [20] • LPE (Liquid-Phase Epitaxy) [24] • MOCVD [22] • MBE [23] • PVD [16] • Hybrid approaches [20] • MOVPE (Metal Organic Vapor-Phase Epitaxy) [25] • VPE (Vapor-Phase Epitaxy) [26] • MOCVD [13] • MBE [23] • PVD [27] Group-Combination (II, III, V, VI)…”

Section: Introductionmentioning

confidence: 99%

A Review of Light-Emitting Diodes and Ultraviolet Light-Emitting Diodes and Their Applications

Bhattarai,

Ebong,

Raja

2024

Photonics

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This paper presents an extensive literature review on Light-Emitting Diode (LED) fundamentals and discusses the historical development of LEDs, focusing on the material selection, design employed, and modifications used in increasing the light output. It traces the evolutionary trajectory of the efficiency enhancement of ultraviolet (UV), blue, green, and red LEDs. It rigorously examines the diverse applications of LEDs, spanning from solid-state lighting to cutting-edge display technology, and their emerging role in microbial deactivation. A detailed overview of current trends and prospects in lighting and display technology is presented. Using the literature, this review offers valuable insights into the application of UV LEDs for microbial and potential viral disinfection. It conducts an in-depth exploration of the various microorganism responses to UV radiation based on the existing literature. Furthermore, the review investigates UV LED-based systems for water purification and surface disinfection. A prospective design for a solar-powered UV LED disinfection system is also delineated. The primary objective of this review article is to organize and synthesize pivotal information from the literature, offering a concise and focused overview of LED applications. From our review, we can conclude that the efficiency of LEDs has continuously increased since its invention and researchers are searching for methods to increase efficiency further. The demand for LED lighting and display applications is continuously increasing. Our analysis reveals an exciting horizon in microbial disinfection, where the integration of UV LED systems with cutting-edge technologies such as sensors, solar power, Internet-of-Things (IoT) devices, and artificial intelligence algorithms promises high levels of precision and efficacy in disinfection practices. This contribution sets the stage for future research endeavors in the domain of viral disinfection using solar-powered UV LED modules for universal applications.

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“…GaAs x P 1-x is a ternary III-V semiconductor which has found many uses. Since the early 1970s, it has been widely used to fabricate red, orange, and yellow light emitting diodes [1,2]. It was studied for use as a graded base layer in heterojunction bipolar transistors (HBTs) in the 1990s [3].…”

Section: Introductionmentioning

confidence: 99%

Heavy p-type carbon doping of MOCVD GaAsP using CBrCl3

Heidelberger

Fitzgerald

2016

Journal of Crystal Growth

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CBrCl 3 is shown to be a useful precursor for heavy p-type carbon doping of GaAs x P 1-x grown via metalorganic chemical vapor deposition (MOCVD) across a range of compositions. Structural and electrical properties of the GaAsP films were measured for various processing conditions. Use of CBrCl 3 decreased the growth rate of GaAsP by up to 32% and decreases x by up to 0.025. The dependence of these effects on precursor inputs is investigated, allowing Cdoped GaAsP films to be grown with good thickness and compositional control. Hole concentrations of greater than 2 × 10 19 cm-3 were measured for values of x from 0.76 to 0.90.

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Vapor phase epitaxial materials for LED applications

Cited by 98 publications

References 62 publications

Compound Semiconductors

Compound Semiconductors

A Review of Light-Emitting Diodes and Ultraviolet Light-Emitting Diodes and Their Applications

Heavy p-type carbon doping of MOCVD GaAsP using CBrCl3

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