Vapor-phase silanization of oxidized porous silicon for stabilizing composition and photoluminescence

Abstract

A vapor-phase deposition approach to the silanization modification of the oxidized porous silicon ͑PSi͒ surface using ͑CH 3 O͒ 3 Si͑CH 2 ͒ 3 NH 2 has been exploited. Standard clean ͑SC͒-1 ͑NH 3 H 2 O / H 2 O 2 / H 2 O, 1:1:5,v/ v͒ and SC-2 ͓HCl/ H 2 O 2 / H 2 O ͑1:1:6,v/ v͔͒ solutions are utilized for the first time to obtain oxidized PSi and have been proved to be a very efficient combination for creating Si-OH species on the PSi surface. After the modification, an amine group terminated surface was successfully created as demonstrated by the contact angle with water, the x-ray photoelectron spectroscopy, and the Fourier transform infrared ͑FTIR͒ spectra. The influences of the surface derivatives on the composition stability of the PSi layer and on its photoluminescence properties were investigated by means of FTIR spectra, photoluminescence spectra, and time-resolved photoluminescence measurements.

An In-Depth Study Linking the Infrared Spectroscopy and Photoluminescence of Porous Silicon during Ambient Hydrogen Peroxide Oxidation

“…Oxidation of ap-pSi to form oxidized pSi (ox-pSi) is one strategy that is used to stabilize the pSi PL, 4,25 and oxidation also provides a convenient pathway to tailor the pSi surface by using secondary derivatization strategies. 26,27 There have been many methods used to create ox-pSi, including rapid thermal oxidation, 28 hot water annealing, 29 anodic oxidation, 30 and oxidation by O 2 , 31 O 3 , 32 and hydrogen peroxide (H 2 O 2 ) 33 . H 2 O 2 oxidation is attractive because it is relatively safe and fast and can proceed at room temperature; it also does not require sophisticated apparatus.…”

“…Oxidation of ap-pSi to form oxidized pSi (ox-pSi) is one strategy that is used to stabilize the pSi PL, 4,25 and oxidation also provides a convenient pathway to tailor the pSi surface by using secondary derivatization strategies. 26,27…”

Link between O2SiH Infrared Band Amplitude and Porous Silicon Photoluminescence During Ambient O3 Oxidation

“…pSi surface oxidation can stabilize its PL 6,25 and surface oxidation provides a pathway to tailor the surface using secondary reagents. 26,27 There have been many methods used to oxidize pSi including rapid thermal oxidation, 28 hot water annealing, 29 anodic oxidation, 30 and O 31 2 and ozone (O 3 ) oxidation. 32 O 3 oxidation strategies are attractive because they are fast, they proceed at room temperature, and they tend to oxidize the entire pSi material.…”

Comparative SERS study carried out on unsilanized and silanized oxidized porous silicon surface coated by small gold nanoparticles

“…After that, the PSi layers were oxidized for one hour in wet oxygen at 950°C to stabilize the surface [28][29][30] and also as a prerequisite step for the chemical functionalization [31,32]. By…”