Vapor pressure and melting points of xenon difluoride and xenon tetrafluoride

Schreiner, F.; McDonald, Geraldine N.; Chernick, Cedric L.

doi:10.1021/j100850a014

Cited by 72 publications

(25 citation statements)

References 1 publication

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“…This is then exposed to different amounts of XeF2 at 225 K to avoid the presence of condensed XeF2.Below 225 K, evolution of XeF2 in the TPD experiments is apparent. The desorption temperature of XeF2 with a peak temperature of 205 -220 K, is consistent with the known heat of sublimation of XeF2 of 13.2 kcal/mol[59].…”

supporting

confidence: 81%

Effect of a fluorinated nickel surface on the decomposition of perfluorodiethoxymethane

Sreevidya¹

1995

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supporting

confidence: 81%

Effect of a fluorinated nickel surface on the decomposition of perfluorodiethoxymethane

Sreevidya¹

1995

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“…22 Therefore we conclude that the ␥-feature is caused by the evaporation of a XeF 2 condensation layer on the silicon surface. This yields a large SiF 4 desorption signal by direct reaction of the evaporating XeF 2 .…”

Section: Steady-state Reaction Layermentioning

confidence: 71%

Si/XeF2 etching: Temperature dependence

Vugts

Verschueren

Eurlings

et al. 1996

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The temperature dependence of the Si͑100͒/XeF 2 etch reaction is studied quantitatively in a molecular beam setup. At a sample temperature of 150 K the reaction probability reaches unity initially, after which the XeF 2 condenses on the surface and blocks the etching process. For increasing temperatures the XeF 2 reaction probability initially decreases from 100% at 150 K down to 20% around 400 K, but for temperatures above 600 K it increases again up to 45% at 900 K. In a simple reaction scheme the high etch rate at low temperatures is explained by a XeF 2 -precursor, with an activation energy for desorption of 32Ϯ4 meV. Furthermore the increased etch rate at high temperatures is explained by the desorption of SiF 2 with an activation energy of 260Ϯ30 meV. The steady-state fluorine content of the SiF x reaction layer, measured using thermal desorption spectroscopy, reaches a maximum of 5.5 monolayers at 300 K. For increasing temperatures it decreases to a submonolayer coverage above 700 K. The temperature dependence of the formation of the reaction layer is described well by including the XeF 2 -precursor in a previously developed adsorption model.

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“…The intermolecular forces in solid XeF,, XeF,, and their molecular adducts are principally coulombic, since the Xe-F bonds are rather polar; the high enthalpy of sublimation of xenon difluoride (13.2 kcal mol-' [12]) is consistent with a charge of -4 on each fluorine atom [13]. The data summarized in Table I11 show the effects of these intermolecular forces on the structural and vibrational properties of the xenon fluoride molecules.…”

Section: Discussionmentioning

confidence: 97%