Vapor pressure of germanium precursors

Vapor pressures of dimethylcadmium, trimethylbismuth, and tris(dimethylamino)antimony

“…Ultra-high purity samples of (CH 3 The analysis of metal impurities was performed by inductively coupled plasma optical emission spectroscopy (ICP-OES) using Iris Advantage spectrometer (Thermo Jarrell Ash). Mass fraction of metal impurities was below 10 ppm (not exceeding 1 ppm for each analyzed metal).…”

“…The vapor pressure measurements of (CH 3 ) 2 Cd, (CH 3 ) 3 Bi, and Sb[N(CH 3 ) 2 ] 3 were performed using the static method with the previously described STAT7 apparatus [3], and thus only a short description is needed here.…”

“…The vapor pressure measurements (CH 3 ) 2 Cd, (CH 3 ) 3 Bi, and Sb[N(CH 3 ) 2 ] 3 were performed in the temperature interval from 258 to 323 K by varying the temperature at random to detect systematic errors caused by insufficient degassing or decomposition of the sample. The experiments were carried out repeatedly at selected temperatures.…”

“…Therefore, in 2003 we launched a long-term research project aiming at systematic and accurate vapor pressure measurements of metalorganic precursors used for epitaxial techniques. Since then, a series of increasingly improved vapor pressure apparatuses capable of measuring reactive and toxic materials have been constructed in our laboratory [1][2][3][4] and the vapor pressures of the precursors of Ga, Al, Sb, Zn, Si, In, Y, Zr, Ge, and Hf have been determined [1,3,[5][6][7][8][9][10][11]. A recent compendium covering phase transition enthalpy measurements of organic and organometallic compounds [12] gives a comprehensive overview of the literature sources reporting vapor pressures of metalorganic precursors in the period 1880-2010 and we recommend to consult it first when looking for vapor pressure data for these materials.…”

“…(CH 3 ) 3 Bi is an important precursor for Bi doping of 12-16 semiconductor materials as for example ZnTe where it serves as a p-type dopant [18]. (CH 3 ) 3 Bi is also used as a precursor for a direct Bi incorporation into 13-15 materials [19,20].…”