Vapor pressures of trialkyl borates

Abstract

07102Vapor pressure-temperature measurements have been observed for the following trialkyl borates: methyl, ethyl, propyl, isopropyl, butyl, and isobutyl. The data were fitted into the equation, logI,IPmm, = A / T + B l o g~T + C, and the constants A, 6, and C, evaluated from a least-squares calculation on the IBM 1620 computer, were employed for finding the normal boiling point, latent heat, and entropy of vaporization for each of the borates.

Densities and viscosities of trialkyl borates

“…The observed borate densities were fitted into the equation p = a + b(t -25) + c(t -25)2 + d(t -25)3 (1) where a, b, c, and d are constants, and t = °C. The data indicated the usual trends, whereby the methyl borate showed the highest density, and the p's of the remaining unbranched homologs increased with molecular weight above 40°C ., the branched isomers having correspondingly lower values.…”

Atomic Layer Deposition of Localized Boron- and Hydrogen-Doped Aluminum Oxide Using Trimethyl Borate as a Dopant Precursor

“…TMB exhibits vapour pressure of 0.22 bar at room temperature. 42 This lowers risks of condensation and enables use without any source heating, as is the case for B(NMe 2 ) 3 (source temperature 60 • C) [36][37][38] and the precursors for direct deposition of metal borates, such as 3 as co-reagent for the deposition of films in an ALD-like fashion, both in a binary process (to deposit B 2 O 3 ) and in a mixed film growth in combination with ALD of Al 2 O 3 using trimethyl aluminum (TMA) and oxygen plasma as precursors. It is found out that the reaction mechanism is dependent on the Lewis acidity of the surface resulting in two different growth modes: chemisorption on Al-OH and Si-OH terminated surface and physisorption on more acidic B-OH surface sites.…”

“…TMB exhibits a vapor pressure of 0.22 bar at room temperature. 42 This lowers risks of condensation and enables use without any source heating, as is the case for B(NMe 2 ) 3 (source temperature of 60 °C) 36−38 and the precursors for direct deposition of metal borates, such as Ba(Tp Et2 ) 2 (source temperatureof 205 °C). 29 The high vapor pressure is also promising for use in atmospheric-pressure ALD systems.…”

“…On one hand, it is a liquid at room temperature with a high vapor pressure, as is clear from Figure e. TMB exhibits a vapor pressure of 0.22 bar at room temperature . This lowers risks of condensation and enables use without any source heating, as is the case for B­(NMe 2 ) 3 (source temperature of 60 °C) − and the precursors for direct deposition of metal borates, such as Ba­(Tp Et2 ) 2 (source temperatureof 205 °C) .…”

“…Graphical representation of some selected boron precursors: (a) B­(O-Et) 3 , (b) B­(O-Me) 3 , (c) B­(NEtMe) 3 , and (d) B­(O i Pr) 3 . (e) Vapor pressures at various precursor pressures, as reported by Christopher and Shilman …”