Vapor treatment as a new method for photocurrent enhancement of UV photodetectors based on ZnO nanorods

Saghaei, Jaber; Fallahzadeh, Ali; Saghaei, Tayebeh

doi:10.1016/j.sna.2016.05.050

Cited by 31 publications

(13 citation statements)

References 47 publications

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“…The ultraviolet (UV) photodetector is a very significant optical device that can be used in a wide area of applications such as biological analysis, environmental analysis, space, optical communication, military, and civilian requests [ 1 ]. Currently, different UV photodetectors based on ZnO nanostructures possess considerable concern owing to their exceptional characteristics, such as the direct optical energy band-gap of 3.37 eV, radiation hardness, outstanding sensitivity to absorb oxygen on the surfaces, high optical gain, high chemical stability, and temperature resistance [ 2 ]. In these fields of application, rapid response (rise) and retrieval (fall) times are the key UV detection properties that facilitate faster feedback.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of High-Quality UV Photodetectors Based ZnO Nanorods Using Traditional and Modified Chemical Bath Deposition Methods

et al. 2021

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Ultraviolet (UV) photodetectors (PDs) based on high-quality well-aligned ZnO nanorods (NRs) were fabricated using both modified and conventional chemical bath deposition (CBD) methods. The modified chemical bath deposition (M-CBD) method was made by adding air bubbles to the growth solution during the CBD process. The viability and effectiveness of M-CBD were examined by developing UV PDs based on ZnO NRs. The ZnO nano-seed layer was coated on a glass substrate utilizing radiofrequency (RF) sputtering. The impact of the different growth-times on morphology, growth rate, crystal structure, and optical and chemical properties were investigated systematically using different characterization techniques, such as field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) analysis, UV–VIS double beam spectrometer, and energy dispersive X-ray analysis (EDX), respectively. The Al/ZnO UV PDs based on ZnO nanorods were fabricated with optimum growth conditions through the two methods of preparation. This study showed that the synthesized ZnO NRs using the M-CBD method for different growth times possess better properties than the conventional method under similar deposition conditions. Despite having the highest aspect ratio and growth rate of ZnO NRs, which were found at 4 h growth duration for both methods, the aspect ratio of ZnO NRs using the M-CBD technique was comparatively higher than the conventional CBD method. Besides, the UV PDs fabricated by the M-CBD method at 5 V bias voltage showed high sensitivity, short response time, quick recovery time, high gain, low dark current, and high photocurrent compared with the UV PD device fabricated by the conventional CBD method.

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Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of High-Quality UV Photodetectors Based ZnO Nanorods Using Traditional and Modified Chemical Bath Deposition Methods

et al. 2021

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“…Photoconductive effect means when under light irradiation, an obvious raising of the material's electrical conductivity occurs, which is caused by the increasing number of free carriers. On the macroscopic perspective, when a bias voltage and a load resistor are used in series with the device, a voltage drop across the load resistors can be measured when the change in electrical conductivity of the material varies the current through the circuit . Classic examples of photoconductive effect include photoresistor and photodiode .…”

Section: Introductionmentioning

confidence: 99%

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Dong

Wang

2019

Annalen der Physik

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Functionalization of photoelectric effect in nanostructures is presenting a promising strategy for humans to achieve precise detection and efficient transformation. Due to the high applied value, numerous materials and constructions are adopted for photoelectric effect to deliver on its potential performance. Among these functional materials, metal-semiconductor (MS) or metal-oxide-semiconductor (MOS) systems own unparalleled advantage including reliable stability, superb physical performance, and simple fabrication process. Herein, two types of photoelectric effect, lateral photovoltaic and photo-induced resistance effect, in nanostructure MS or MOS systems are reviewed. These effects have great potential in applications and will play a beneficial role in future investigations. In addition, how each component of the system contributes to the photoelectric properties and responds to external fields are detailed, suggesting future study directions in photoelectric fields.

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“…In addition, high-performing UV photodetectors have specific applications in ozone sensing, flame detection, and military surveillance [5,6]. To improve the performance of a UV photodetector, various designs and materials have been applied, such as the GaN-based Schottky junction [6], graphene-based junction [6][7][8], GaAs/AlGaAs nanowires [9], ITO nanodomes [10], ITO nanowires with ZnO film [11,12], NiO/ZnO films [5], ZnO/ZnS nanowires [13], ZnO nanorods [14], ZGO nanowires [15], and Si/ZnO nanowires [1]. When considering the complexity of elaborate photodetector designs, the fabrication steps and cost should also be considered for practical applications [2].…”

Section: Introductionmentioning

confidence: 99%

Hybrid Structures of ITO-Nanowire-Embedded ITO Film for the Enhanced Si Photodetectors

Kim

Lee

Kim

2018

Journal of Nanomaterials

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A high-performance silicon UV photodetector was achieved by using a hybrid of a film with nanowires. Electrically conductive and optically transparent indium-tin oxide (ITO) was deposited to form an ITO film or ITO nanowire (NW) on a Si substrate, resulting in a heterojunction. The ITO-film device is stable with a low-leakage current. Meanwhile, the ITO NWs demonstrated an excellent capability to collect photogenerated carriers. The hybrid ITO (NWs on a film)/Si photodetector demonstrates a fast UV reactive time of 1.6 ms among Si-based photodetectors. We may find a means of enhancing the photoelectric performance capabilities of devices beyond the limits of conventional Si via the adoption of functional designs. Moreover, the use of a homogeneous material for the structuring of films and nanowires would offer a remarkable advantage by reducing both the number of fabrication steps and the cost.

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Vapor treatment as a new method for photocurrent enhancement of UV photodetectors based on ZnO nanorods

Cited by 31 publications

References 47 publications

Fabrication and Characterization of High-Quality UV Photodetectors Based ZnO Nanorods Using Traditional and Modified Chemical Bath Deposition Methods

Fabrication and Characterization of High-Quality UV Photodetectors Based ZnO Nanorods Using Traditional and Modified Chemical Bath Deposition Methods

Lateral Photovoltaic Effect and Photo‐Induced Resistance Effect in Nanoscale Metal‐Semiconductor Systems

Hybrid Structures of ITO-Nanowire-Embedded ITO Film for the Enhanced Si Photodetectors

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