Vaporization Catalysis. The Decomposition of Gallium Nitride<sup>1</sup>

Schoonmaker, Richard C.; Buhl, Albert; Lemley, J.R.

doi:10.1021/j100894a035

Cited by 82 publications

(34 citation statements)

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“…4). Schoonmaker et al [28] demonstrated over 40 years ago that the height of this barrier is strongly reduced when GaN is covered by liquid Ga or In (Fig. 4).…”

Section: Growth Conditions For Pambementioning

confidence: 99%

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Skierbiszewski

Wasilewski

Grzegory

et al. 2009

Journal of Crystal Growth

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Nitride-based laser diodes by plasma-assisted MBE-From violet to green emission Skierbiszewski, C.; Wasilewski, Z.R.; Grzegory, I.; Porowski, S.Contact us / Contactez nous: nparc.cisti@nrc-cnrc.gc.ca. We present recent progress in growth of nitride-based laser diodes (LDs) and efficient light-emitting diodes (LEDs) made by plasma-assisted MBE (PAMBE). This technology is ammonia free, and nitrogen for growth is activated by RF plasma source from nitrogen molecules. The recent demonstration of CW blue InGaN LDs has opened a new perspective for PAMBE in optoelectronics. The LDs were fabricated on low threading dislocation density (TDD) bulk GaN substrates at low growth temperatures 600-700 1C.In this work, we describe the nitride growth fundamentals, the influence of the TDD on the layer morphology, the peculiarities of InGaN growth as well as properties of LEDs and LDs made by PAMBE.

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“…4). Schoonmaker et al [28] demonstrated over 40 years ago that the height of this barrier is strongly reduced when GaN is covered by liquid Ga or In (Fig. 4).…”

Section: Growth Conditions For Pambementioning

confidence: 99%

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Skierbiszewski

Wasilewski

Grzegory

et al. 2009

Journal of Crystal Growth

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“…This leads to an enrichment of liquid gallium in the non-decomposed part of the GaN sample and to an accelerated rate of GaN decomposition. This autocatalysis was first presented by Schoonmaker et al [3], who observed it when GaN was in direct contact with liquid gallium. As far as we know, the chemical state of the released nitrogen is unclear.…”

Section: Introductionmentioning

confidence: 64%

“…www.crt-journal.org samples [3][4][5]. By means of mass spectroscopy gaseous GaN species have never been observed.…”

Section: Introductionmentioning

confidence: 99%

Vapor phase growth of GaN using GaN powder sources and thermogravimetric investigations of the evaporating behaviour of the source material

Kallinger

Meissner

Berwian

et al. 2007

Cryst. Res. Technol.

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The growth of GaN from the vapor phase is a promising technique for producing both bulk GaN crystals and GaN layers. For establishing a growth method from the vapor phase the source material and reactor setup are of great importance. Highly pure and self synthesized GaN powder was chosen as source material. The evaporation behaviour of the GaN powder was studied by means of thermogravimetry (TG). A vertical growth reactor was set up according to the results of numerical simulations of the temperature distributions and flow patterns. Freely nucleated GaN platelets of some millimetres in length were grown. Furthermore, thin GaN layers were deposited directly on a sapphire substrate. This nucleation layer was successfully overgrown by low pressure solution growth.

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“…It should be a listable" surface which retains its crystallographic orientation throughout the experiments (Somc)rjai and Stemple,1953)~· It is important to determine its dislocation density using etch-pit count techniques (Lester andSomorjai, 1968) and' -8-to investigate its surface topology using optical or electron microscopy (Searcy, 1968). It has been shown that the surface structure can markedly influence the evaporation rates of many solids (Lester and Somorjai, 1968;Rosenblatt and'Lee, 1968;Searcy, 1968) •. The bulk properties of the vaporizing crystal samples should also be well characterized.…”

Section: Principles Of Vaporization Studiesmentioning

confidence: 99%

Studies of the Sublimation Mechanism of Solids

Somorjai

1969

Advances in High Temperature Chemistry

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Vaporization Catalysis. The Decomposition of Gallium Nitride¹

Cited by 82 publications

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Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Vapor phase growth of GaN using GaN powder sources and thermogravimetric investigations of the evaporating behaviour of the source material

Studies of the Sublimation Mechanism of Solids

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Vaporization Catalysis. The Decomposition of Gallium Nitride1

Cited by 82 publications

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Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission

Vapor phase growth of GaN using GaN powder sources and thermogravimetric investigations of the evaporating behaviour of the source material

Studies of the Sublimation Mechanism of Solids

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Vaporization Catalysis. The Decomposition of Gallium Nitride¹