Vapour phase growth of InP from the In-PH3-HCl-H2 system

Modeling the CVD Growth of Iii-v- Compounds

“…Lets take arbitrary values for X, El and AH and a typical value for T and plot equation (1) as a function of 9, Fig.l curve (a). Qualitatively, this curve is identical to those often obtained experimentally and widely reported [1,[3][4][5][6][7][8][9][10]. The qualitative behavior of these curves is easily discussed; however, because of space limitations we can not do it here.…”

“…Looking in the literature we found CVD growth rates as a function of the substrate temperature for GaAs, InP, GaP, and InAs [1,[3][4][5][6][7][8][9][10]. All the data in these references were correctly fitted using equation (1).…”

“…All the data in these references were correctly fitted using equation (1). Once again, because space limitations we will show just some examples of the fitting.…”

“…Figure 4 Fitting to InP growth rate data of Ref [10]. 8-10], using equation (1). Equation (1) fits even the "negative" growth rate.. CVD successfully grows InP as well [1,[7][8][9][10].…”

“…Nevertheless, its models had become complicated considering gaseous diffusion, adsorption phenomena, availability of sites, chemical activity and reactions, surface diffusion and lattice incorporation. A model might need about a hundred equations with countless approximations, and a high number of adjusting parameters that after all, fitting to experimental results is poor [1][2]. Here we propose a model that uses a reversible reaction between the transporting gas and the III atoms at the source and substrate surfaces considering that they might have a different chemical activity at each one of these surfaces.…”