Variability and reliability analysis of CNFET technology: Impact of manufacturing imperfections

Abstract

Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit characteristics rivaling those of state-of-the-art Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). However, as any technology that is in development, CNFET fabrication process still have some imperfections that results in carbon nanotube variations, which can have a severe impact on the devices' performance and jeopardize their reliability (in this work the term reliability means time-zero failure due to manufacturing variations). This paper presents a study of the effects on transistors of the main CNFET manufacturing imperfections, including the presence of metallic carbon nanotubes (m-CNTs), imperfect m-CNT removal processes, chirality drift, CNT doping variations in the source/drain extension regions, and density fluctuations due to non-uniform inter-CNT spacing.

Systematic Transistor Sizing of a CNFET-Based Ternary Inverter for High Performance and Noise Margin Enlargement

“…STIs with original transistor sizes in [16] STIs with threshold voltages indicated in [35] STIs with proposed transistor sizes without PV (Fig. In spite of its several great advantages, CNFET is still in development and suffers from imperfect fabrication [50,51]. Some of the manufacturing issues are metallic and misaligned CNTs, chirality drift, CNT doping variations, and density fluctuations [50].…”

“…In spite of its several great advantages, CNFET is still in development and suffers from imperfect fabrication [50,51]. Some of the manufacturing issues are metallic and misaligned CNTs, chirality drift, CNT doping variations, and density fluctuations [50]. One of the most problematic issues affecting circuit design is that D CNT is subject to 0.04nm to 0.2nm variations [52].…”

An efficient reliability estimation method for CNTFET‐based logic circuits

“…Variations in CNT diameter and density result in delays and power consumption variation. Additionally, the misalignment of CNTs can lead to incorrect functionality [30].…”

“…Therefore, the space complexity of this process is based on a 9 × 9 JPIM, 9 × 3 PTM, and 9 × 3 IM, which are independent of the number of circuit gates. Consequently, the space complexity of a circuit containing g two-input NAND gates can be calculated according to (30).…”

Nanoparticle Filler Content and Shape in Polymer Nanocomposites

“…et al, 2013). Synthesis of CNTs, for example, leads to a mixture of conducting and semiconducting nanoparticles whereas the conductivity of the former depends on doping, diameter, density and chirality (Almudever C.G. and Rubio A., 2015).…”