Variability of Cu2ZnSnS4 nanoparticle hot injection synthesis and modifications by thin film annealing
K. P. Stroh,
M. Szablewski,
D. P. Halliday
Abstract:As a quaternary semiconductor with a direct energy bandgap around 1.4 eV, Cu2ZnSnS4 is a promising candidate for the absorber layer in next generation thin-film solar PV devices. It has...
Cu2ZnSnS4 (CZTS) is a narrow band gap, non-toxic, and environmentally friendly semiconductor with important properties for photovoltaic and electro-/photo- catalytic applications. In this study, we report on the synthesis of...
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