2003
DOI: 10.1016/s0921-4526(03)00021-8
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Variable range hopping in finite one-dimensional and anisotropic two-dimensional systems

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Cited by 6 publications
(2 citation statements)
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“…However, here we suggest that VRH is responsible for the conduction process and the V o dominates the switching mechanism of the fabricated RRAM devices. According to hopping theory, 33 the I-V curves of RRAM device can be formulated as the eqn (1).…”
Section: Resultsmentioning
confidence: 99%
“…However, here we suggest that VRH is responsible for the conduction process and the V o dominates the switching mechanism of the fabricated RRAM devices. According to hopping theory, 33 the I-V curves of RRAM device can be formulated as the eqn (1).…”
Section: Resultsmentioning
confidence: 99%
“…a, which means that the nanowires in the perpendicular directions have a phase that more closely resembles the isotropic or the heterogeneous phase. The flow arranges the NW's into an anisotropic system , which is more pronounced for the 0.25 and 0.35 μm deep gratings. The anisotropic behavior of the NW's will depend on the length of the NW compared to the width of the gratings .…”
Section: Resultsmentioning
confidence: 98%