Variable range hopping mechanism in band-tail states of feldspars: A time-resolved IRSL study

Morthekai, P.; Thomas, J. B.; Pandian, M. S.; Balaram, V.; Singhvi, A. K.

doi:10.1016/j.radmeas.2012.03.007

Cited by 26 publications

(10 citation statements)

References 15 publications

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“…X-ray Diffraction analysis indicated that the major fractions in FL3 were andesine, while diopside was also present in the sample. Elemental concentrations were estimated using ICP-MS measurements, and sample FL3 was placed in the plagioclase feldspar series and details about the samples are given in Morthekai et al (2012). The samples were crushed gently using agate mortar and sieved to obtain the 90-150 µm size fraction, which was used without any further chemical treatment.…”

Section: Sample Characteristics and Experi-mental Detailsmentioning

confidence: 99%

Kinetic analysis of thermoluminescence glow curves in feldspar: evidence for a continuous distribution of energies

2014

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Abstract:The thermoluminescence (TL) glow curves from feldspars have been the subject of numerous studies, because of their importance in luminescence dating and dosimetry. This paper presents new experimental TL glow curves in a plagioclase feldspar, measured using the T max -T stop technique of glow curve analysis. Kinetic analysis of the experimental results is carried out for a freshly irradiated sample, as well as for a sample which has undergone optical treatment using infrared light for 100 s at 50°C. Application of the initial rise method of analysis indicates that the TL signals from both samples can be characterized by a continuous distribution of energy levels. By subtracting the TL glow curves measured at successive T stop values, a series of TL glow curves is obtained which are analyzed using the empirical general order kinetics. It is found that all TL glow curves obtained by this subtractive procedure can be described accurately by the same general order parameter b ~1.7. In a second attempt to analyze the same TL glow curves and possibly extract information about the underlying luminescence process, the shape of TL glow curves is analyzed using a recently proposed physical kinetic model which describes localized electronic recombination in donor-acceptor pairs. Within this model, recombination is assumed to take place via the excited state of the donor, and nearest-neighbor recombinations take place within a random distribution of centers. This recent model has been used recently to describe successfully several types of luminescence signals. This paper shows that it is possible to obtain good fits to the experimental data using either one of these two approaches.

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Section: Sample Characteristics and Experi-mental Detailsmentioning

confidence: 99%

Kinetic analysis of thermoluminescence glow curves in feldspar: evidence for a continuous distribution of energies

2014

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“…Overall, several recent experimental and modeling papers have contributed to a better understanding of the luminescence and tunneling processes in feldspars provided valuable information on the origin of IRSL signals from feldspars, and supported the existence of tunneling processes involving localized recombinations with tunneling taking place from the excited state of the trap, as well as charge migration through the conduction band-tail states (Poolton et al [18], Jain and Ankjaergaard [19], Ankjaergaard et al [20], Thomsen et al [24], Pagonis et al [29], Kars et al [30], Morthekai et al [31].…”

Section: Discussionmentioning

confidence: 88%

“…Morthekai et al [31]. The IR bleaching was achieved by IR LEDs (870 ± 40 nm) and the luminescence emission was detected using a photomultiplier tube and combination of optical filters transmitting photons in the wavelength region 395 ± 50 nm.…”

Section: Methodsmentioning

confidence: 99%

Mathematical characterization of continuous wave infrared stimulated luminescence signals (CW-IRSL) from feldspars

Pagonis¹,

Phan²,

Goodnow³

et al. 2014

Journal of Luminescence

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“…Para el caso de tres dimensiones los autores (Mott 1969, Morthekai et al 2012) establecieron que, si la densidad de estados (DOS) es constante en un rango de energía kBT alrededor del nivel de Fermi, la conductividad a oscuras en función de la temperatura puede ser expresada como: donde: σosc es la conductividad a oscuras, T es la temperatura y T0, σ0 son constantes que dependen del material.…”

Section: Procesos Hopping a Través Del Modelo Difusional En Materialeunclassified

Procesos hopping a través del modelo difusional en materiales nanocristalinos usados para aplicaciones fotovoltaicas

Dussán

Mesa²

2014

Univ. Sci.

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Here, we present variable range hopping (VRH) models, nearest neighbor hopping (NNH) and potential barriers present at the grain boundaries, as well as mechanisms of electrical transport predominant in semiconductor materials for photovoltaic applications. We performed dark conductivity measures according to temperature for low temperature regions between 120 and 400 K in Si and Cu 3 BiS 2 and Cu 2 ZnSnSe 4 compounds. Using the percolation theory, we obtained hopping parameters and the density of states near the Fermi, N(E F) level for all samples. Using the approach by Mott for VRH, we obtained the diffusion model, which established the relationship between conductivity and density of defect states or localized gap states of the material. The comparative analysis between models evidenced that it is possible to obtain improvement of an order of magnitude in the values of each of the hopping parameters that characterize the material.

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Variable range hopping mechanism in band-tail states of feldspars: A time-resolved IRSL study

Cited by 26 publications

References 15 publications

Kinetic analysis of thermoluminescence glow curves in feldspar: evidence for a continuous distribution of energies

Kinetic analysis of thermoluminescence glow curves in feldspar: evidence for a continuous distribution of energies

Mathematical characterization of continuous wave infrared stimulated luminescence signals (CW-IRSL) from feldspars

Procesos hopping a través del modelo difusional en materiales nanocristalinos usados para aplicaciones fotovoltaicas

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