2011
DOI: 10.1021/jp108167t
|View full text |Cite
|
Sign up to set email alerts
|

Variable Temperature Spectroscopy of As-Grown and Passivated CdS Nanowire Optical Waveguide Cavities

Abstract: Semiconductor nanowire waveguide cavities hold promise for nanophotonic applications such as lasers, waveguides, switches, and sensors due to the tight optical confinement in these structures. However, to realize their full potential, high quality nanowires, whose emission at low temperatures is dominated by free exciton emission, need to be synthesized. In addition, a proper understanding of their complex optical properties, including light-matter coupling in these subwavelength structures, is required. We ha… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
26
0

Year Published

2013
2013
2024
2024

Publication Types

Select...
8

Relationship

3
5

Authors

Journals

citations
Cited by 29 publications
(26 citation statements)
references
References 41 publications
0
26
0
Order By: Relevance
“…Waveguide dispersion modelling, an understanding of propagation loss as a function of wavelength, and improved crystal quality due to surface passivation [202] combined led to the most complete investigation into the size-dependence of optical properties of dielectric nanowires to date [173]. Figure 14a, c, and e show photoluminescence spectra collected from the end facets of three different surface-passivated CdS nanowires, while b, d, and f show Fabry-Pérot maxima plotted along fitted numerical calculations for the fundamental waveguide mode.…”
Section: Size-dependent Optical Properties Of Semiconductor Nanowiresmentioning
confidence: 99%
See 1 more Smart Citation
“…Waveguide dispersion modelling, an understanding of propagation loss as a function of wavelength, and improved crystal quality due to surface passivation [202] combined led to the most complete investigation into the size-dependence of optical properties of dielectric nanowires to date [173]. Figure 14a, c, and e show photoluminescence spectra collected from the end facets of three different surface-passivated CdS nanowires, while b, d, and f show Fabry-Pérot maxima plotted along fitted numerical calculations for the fundamental waveguide mode.…”
Section: Size-dependent Optical Properties Of Semiconductor Nanowiresmentioning
confidence: 99%
“…(c) high-resolution transmission electron microscopy (HRTEM) image showing the single-crystalline structure of a GeTe nanowire with the electron diffraction pattern (inset) showing the [202] growth direction of rhombohedral GeTe. (d) Scanning TEM (STEM)-energy dispersive x-ray spectroscopy (EDS) elemental mapping of Ge (green) and Te (red).…”
Section: Figurementioning
confidence: 99%
“…CdS NWs (grown along the c-axis) were grown via the vapor-liquid-solid method as reported elsewhere [40] and then transferred on pre-strained flexible substrates. Figure 1(a) shows schematically the procedure for obtaining in-plane buckled NWs on polydimethylsiloxane (PDMS) substrates.…”
mentioning
confidence: 99%
“…We also present the PL spectrum of CdS NW without any strain (Fig. 2(d) top) for reference; both A- and B-exciton peaks are clearly observed, which imply that the CdS nanowires have high optical quality [40]. Compared with the PL spectra of a buckled nanowire, we can see that the emission peak (red curve) from the node region of the buckled nanowire shows some broadening and is slightly blueshifted (Fig.…”
mentioning
confidence: 99%
“…Furthermore, surface passivation has been shown to reduce surface exciton recombination in nanowires to the point where direct free exciton recombination is directly observed,[39] ultimately resulting in ideal crystals with extremely low defect emission.…”
Section: Light-matter Coupling In Semiconductor Nanowiresmentioning
confidence: 99%