The recent discovery of magnetic van der Waals (vdW) materials
provides a platform to answer fundamental questions on the two-dimensional
(2D) limit of magnetic phenomena and applications. An important question
in magnetism is the ultimate limit of the antiferromagnetic layer
thickness in ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures
to observe the exchange bias (EB) effect, of which origin has been
subject to a long-standing debate. Here, we report that the EB effect
is maintained down to the atomic bilayer of AFM in the FM (Fe3GeTe2)/AFM (CrPS4) vdW heterostructure,
but it vanishes at the single-layer limit. Given that CrPS4 is of A-type AFM and, thus, the bilayer is the smallest unit to
form an AFM, this result clearly demonstrates the 2D limit of EB;
only one unit of AFM ordering is sufficient for a finite EB effect.
Moreover, the semiconducting property of AFM CrPS4 allows
us to electrically control the exchange bias, providing an energy-efficient
knob for spintronic devices.