Variation of the electron-spin polarization in EuSe tunnel junctions from zero to near 100% in a magnetic field

Moodera, Jagadeesh S.; Meservey, R.; Hao, Xiaojian

doi:10.1103/physrevlett.70.853

Cited by 138 publications

(97 citation statements)

References 12 publications

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“…This image has been calculated from the HRTEM micrograph using the geometric phase analysis (GPA) method. 26 The deformation value on the MnFe 2 O 4 layer compared to the substrate is equal to 14%, very close to the expected theoretical value (13.5%) in considering the (111) plane for MnFe 2 Finally, Fig. 4(b) evidences the presence of one of the most common defects known to appear in epitaxial ferrite thin films: the antiphase boundaries (APBs).…”

Section: A Structural and Chemical Characterizationsmentioning

confidence: 54%

Epitaxial growth and ferrimagnetic behavior of MnFe2O4(111) ultrathin layers for room-temperature spin filtering

et al. 2011

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We report on the epitaxial growth and physical properties of spinel MnFe 2 O 4 (111) thin films with thicknesses down to 2 nm. The thin films, grown on α-Al 2 O 3 (0001) single crystals or Pt(111) buffer layers by oxygen-assisted molecular beam epitaxy, exhibit high structural order with sharp interfaces and low roughness. The electrical and magnetic properties are carefully investigated and it is shown that MnFe 2 O 4 (111) ultrathin films keep an insulating and ferrimagnetic behavior at room temperature. Special attention is given to the iron/manganese valence state and the cationic ordering. X-ray absorption spectroscopy and magnetic circular dichroism measurements reveal that thin films contain mainly Fe 3+ and Mn 2+ cations, distributed predominantly in a normal spinel structure. This study proves the high potential of MnFe 2 O 4 to be used as a magnetic tunnel barrier for spin filtering applications at room temperature.

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Section: A Structural and Chemical Characterizationsmentioning

confidence: 54%

Epitaxial growth and ferrimagnetic behavior of MnFe2O4(111) ultrathin layers for room-temperature spin filtering

et al. 2011

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“…This is called the "spin-filter" effect [11]. In favorable cases [12] the spin polarization in tunneling has exceeded 99%.…”

Section: Introductionmentioning

confidence: 99%

Spin-polarized tunneling through a thin-film

Saffarzadeh

2000

Physics Letters A

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The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated with the use of the sf model. Electron-spin polarization is evaluated in the tunnel current which comes from the different densities of spin-up, spin-down conduction electrons at the Fermi level in a ferromagnetic semiconductor (EuS). Calculated results are compared with some tunneling experiments.

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“…Because of this exchange splitting, the probability of tunneling for up spin electrons increases but for down spin it decreases. Using MSs tunnel barriers such as EuS or EuSe, one can obtain nearly 99% spin-polarized tunneling electrons even with nonmagnetic electrodes [7,8].…”

Section: Introductionmentioning

confidence: 99%

Spin-polarized tunneling in ferromagnetic double barrier junctions

Saffarzadeh

2001

Eur. Phys. J. B

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Spin-polarized tunneling in FMS/M/FMS double tunnel junctions where FMSs are ferromagnetic semiconductor layers and M is a metal spacer is studied theoretically within the single-site coherent potential approximation (CPA). The exchange interaction between a conduction electron and localized moment of the magnetic ion is treated in the framework of the s-f model. The spin polarization in the FMS layers is observed to oscillates as a function of the number of atomic planes in the spacer layer. Amplitude of these oscillations decreases with increasing the exchange interaction in FMS layers. PACS

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Variation of the electron-spin polarization in EuSe tunnel junctions from zero to near 100% in a magnetic field

Cited by 138 publications

References 12 publications

Epitaxial growth and ferrimagnetic behavior of MnFe2O4(111) ultrathin layers for room-temperature spin filtering

Epitaxial growth and ferrimagnetic behavior of MnFe2O4(111) ultrathin layers for room-temperature spin filtering

Spin-polarized tunneling through a thin-film

Spin-polarized tunneling in ferromagnetic double barrier junctions

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